ZXMS6001N3
Issue 1 - January 2008 8 www.zetex.com
© Zetex Semiconductors plc 2008
0 1 2 3 4 5 6 7 8 9 10 1112 13 14 15 16
0
1
2
3
-20µ 0 20µ 40µ 60µ 80µ 100µ120µ140µ160µ
0
2
4
6
8
10
12
-50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
3.0 3.5 4.0 4.5 5.0 5.5 6.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
-50 -25 0 25 50 75 100 125 150
0
200
400
600
800
1000
6V
5V
3V
4V
Typical Output Characteristic
T = 25°C
V
IN
I
D
Drain Current (A)
V
DS
Drain-Source Voltage (V)
Current limit inactive
Current limit active
R
D
= 22Ω
R
IN
= 25Ω
V
DS
V
IN
Switching Speed
Voltage (V)
Time (s)
Threshold Voltage vs Temperature
V
IN
= V
DS
I
D
= 1mA
Normalised V
IN(th)
T
J
Junction Temperature (°C)
On-Resistance vs Input Voltage
T
J
= 25°C
I
D
= 0.7A
R
DS(on)
On-Resistance (Ω)
V
IN
Input Voltage (V)
T
J
= 150°C
T
J
= 25°C
Source-Drain Diode Forward Voltage
V
SD
Diode Forward Voltage (V)
I
S
Source Current (A)
V
IN
= 5V
I
D
= 0.7A
On-state Resistance vs Temperature
R
DS(on)
On-Resistance (mΩ)
T
J
Junction Temperature (°C)
