PTN3360A_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 8 October 2009 15 of 21
NXP Semiconductors
PTN3360A
Enhanced HDMI/DVI level shifter with inverting 1.1 V HPD
9.3 HPD_SINK input, HPD_SOURCE_N output
[1] Low-speed input changes state on cable plug/unplug.
[2] Measured with HPD_SINK at V
IH
maximum and V
IL
minimum.
[3] Time from HPD_SINK changing state to HPD_SOURCE_N changing state. Includes HPD_SOURCE_N rise/fall time.
[4] Time required to transition from V
OH
to V
OL
or from V
OL
to V
OH
.
[5] Guarantees HPD_SINK is LOW when no display is plugged in.
9.4 OE_N, DDC_EN inputs
[1] Measured with input at V
IH
maximum and V
IL
minimum.
9.5 DDC characteristics
Table 9. HPD characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
IH
HIGH-level input voltage HPD_SINK
[1]
2.0 5.0 5.3 V
V
IL
LOW-level input voltage HPD_SINK 0 - 0.8 V
I
LI
input leakage current HPD_SINK
[2]
--10µA
V
OH
HIGH-level output voltage HPD_SOURCE_N; I
OH
= 100 µA;
HPD_SINK = LOW
0.7 - 1.1 V
V
OL
LOW-level output voltage HPD_SOURCE_N; I
OH
= 100 µA;
HPD_SINK = HIGH
0 - 0.2 V
t
PD
propagation delay from HPD_SINK to HPD_SOURCE_N;
50 % to 50 %; C
L
=10pF
[3]
- - 200 ns
t
t
transition time HPD_SOURCE_N rise/fall;
10%to90%; C
L
=10pF
[4]
1 - 20 ns
R
pd
pull-down resistance HPD_SINK input pull-down resistor
[5]
100 200 300 kΩ
Table 10. OE_N, DDC_EN and DDET input characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
IH
HIGH-level input voltage 2.0 - - V
V
IL
LOW-level input voltage - - 0.8 V
I
LI
input leakage current OE_N pin
[1]
--10µA
Table 11. DDC characteristics
Symbol Parameter Conditions Min Typ Max Unit
f
clk
clock frequency SCL_SOURCE, SDA_SOURCE, SCL_SINK,
SDA_SINK
- - 400 kHz
ON state (DDC_EN = HIGH)
R
ON
ON resistance pass gate in ON state; I
O
= 15 mA; V
O
= 0.4 V - 7 30 Ω
V
O(sw)
switch output voltage source side; V
I
= 3.3 V; I
O
= −100 µA 1.7 2.1 2.5 V
sink side; V
I
= 5.0 V; I
O
= −100 µA 1.7 2.1 2.5 V
C
io
input/output capacitance V
I
= 3.3 V - 5 10 pF
OFF state (DDC_EN = LOW)
I
LI
input leakage current source side; 0 V < V
I
< 3.3 V −10 - +10 µA
sink side; 0 V < V
I
< 5.0 V −10 - +10 µA
C
io
input/output capacitance V
I
= 3.3 V - 1 5 pF