NXP Semiconductors
PBHV9515QA
150 V, 500 mA PNP high-voltage low VCEsat (BISS) transistor
PBHV9515QA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 19 November 2015 10 / 17
aaa-020582
-1
-10
-1
-10
V
CEsat
(V)
-10
-2
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(2)
(3)
I
C
/I
B
= 5
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 11. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-020583
-1
-10
-1
-10
V
CEsat
(V)
-10
-2
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 20
(2) I
C
/I
B
= 10
(3) I
C
/I
B
= 5
Fig. 12. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-020584
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
1
10
10
2
10
3
R
CEsat
(Ω)
10
-1
(3)
(1)
(2)
I
C
/I
B
= 5
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 13. Collector-emitter saturation resistance as a
function of collector current; typical values
aaa-020585
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
1
10
10
2
10
3
R
CEsat
(Ω)
10
-1
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 20
(2) I
C
/I
B
= 10
(3) I
C
/I
B
= 5
Fig. 14. Collector-emitter saturation resistance as a
function of collector current; typical values
