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PBHV9515QAZ

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
NXP Semiconductors
PBHV9515QA
150 V, 500 mA PNP high-voltage low VCEsat (BISS) transistor
PBHV9515QA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 19 November 2015 6 / 17
aaa-007846
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
-1
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, single-sided copper, 1 cm
2
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-007848
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
FR4 PCB, 4-layer copper, standard footprint
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors
PBHV9515QA
150 V, 500 mA PNP high-voltage low VCEsat (BISS) transistor
PBHV9515QA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 19 November 2015 7 / 17
aaa-007849
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
duty cycle = 1
FR4 PCB, 4-layer copper, 1 cm
2
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors
PBHV9515QA
150 V, 500 mA PNP high-voltage low VCEsat (BISS) transistor
PBHV9515QA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 19 November 2015 8 / 17
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
CB
= -120 V; I
E
= 0 A; T
amb
= 25 °C - - -100 nAI
CBO
collector-base cut-off
current
V
CB
= -120 V; I
E
= 0 A; T
j
= 150 °C - - -10 µA
I
CES
collector-emitter cut-off
current
V
CE
= -120 V; V
BE
= 0 V; T
amb
= 25 °C - - -100 nA
I
EBO
emitter-base cut-off
current
V
EB
= -5 V; I
C
= 0 A; T
amb
= 25 °C - - -100 nA
V
CE
= -10 V; I
C
= -50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
100 210 -
V
CE
= -10 V; I
C
= -100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
100 200 -
V
CE
= -10 V; I
C
= -200 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
100 190 -
h
FE
DC current gain
V
CE
= -10 V; I
C
= -500 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
70 135 -
I
C
= -50 mA; I
B
= -5 mA; T
amb
= 25 °C - -65 -110 mV
I
C
= -100 mA; I
B
= -10 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- -80 -140 mV
I
C
= -100 mA; I
B
= -20 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- -60 -110 mV
I
C
= -200 mA; I
B
= -40 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- -90 -160 mV
V
CEsat
collector-emitter
saturation voltage
- -180 -300 mV
V
BEsat
base-emitter saturation
voltage
I
C
= -500 mA; I
B
= -100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- -0.95 -1.2 V
t
d
delay time - 14 - ns
t
r
rise time - 46 - ns
t
on
turn-on time - 60 - ns
t
s
storage time - 455 - ns
t
f
fall time - 105 - ns
t
off
turn-off time
V
CC
= -10 V; I
C
= -100 mA;
I
Bon
= -20 mA; I
Boff
= 20 mA;
T
amb
= 25 °C
- 560 - ns
f
T
transition frequency V
CE
= -10 V; I
C
= -10 mA; f = 100 MHz;
T
amb
= 25 °C
- 75 - MHz
C
c
collector capacitance V
CB
= -20 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- 4.7 - pF
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

PBHV9515QAZ

Mfr. #:
Buy PBHV9515QAZ
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PBHV9515QA/DFN1010D-3/REEL 7
Lifecycle:
New from this manufacturer.
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