NXP Semiconductors
PBHV9515QA
150 V, 500 mA PNP high-voltage low VCEsat (BISS) transistor
PBHV9515QA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 19 November 2015 3 / 17
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - -150 V
V
CEO
collector-emitter voltage open base - -150 V
V
EBO
emitter-base voltage open collector - -6 V
I
C
collector current - -500 mA
I
CM
peak collector current - -1 A
I
BM
peak base current
single pulse; t
p
≤ 1 ms
- -200 mA
[1] - 325 mW
[2] - 600 mW
[3] - 740 mW
[4] - 540 mW
P
tot
total power dissipation T
amb
≤ 25 °C
[5] - 1 W
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5]
Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm
2
.
