HPM10
www.onsemi.com
2
KEY FEATURES
Supports Multiple Battery Types: Can charge and manage
the power of multiple battery chemistries, including
rechargeable Li−ion and AgZn batteries. Ni−MH batteries
and disposable Zn−Air batteries can be detected as well. An
automatic chemistry detection system recognizes the battery
type.
Flexibility to Support Multiple Battery Sizes: The
charging parameters should be updated depending on the
battery size. Parameters corresponding to one battery size
can be stored in an One−Time Programmable (OTP)
memory at customer site.
Power Supply: Provides a clean supply to the hearing aid
DSP. When a Li−ion battery is used, a step−down capacitive
divider or Charge Pump is used, providing a voltage
between ~1.4 V and ~0.95 V. When a AgZn battery is used,
a linear regulator can be used, providing a 1.5 V max.
HPM10 can also directly provide the battery voltage to the
hearing aid DSP. Eg., when a Zn−Air battery is used or if the
DSP can handle the voltage of a AgZn battery.
Charger Communication Interface: Communicates the
status of the charging process and battery voltage to the
hearing aid charger and allows user interaction with
HPM10.
Information sent in this mode includes:
• Battery voltage level and charge current
• Charge Mode phase
• Battery chemistry type
• Fault conditions
Battery Life Optimization: High−precision current and
voltage sources are used to manage the battery charge curves
with the precision required to optimize battery life duration.
Battery Supervision: Ensures that the battery doesn’t fall
below critical levels. This helps to maximize battery life.
Non−Volatile Memory (OTP): Stores charging
parameters, trim codes, and general product specific
settings.
Power On and Off Management: Based on a smart method
between HPM10 and the hearing aid DSP.
SPECIFICATION
Table 1. ABSOLUTE MAXIMUM RATING
Symbol Parameter Min Max Unit
VDDP DC Supply Voltage for charging −0.5 5.7 V
VDDIO Digital I/O supply −0.5 5.5 V
VDD_OTP OTP Supply −0.5 6.0 V
DVREG Regulated supply for HPM10 −0.5 2.0 V
VBAT DC supply voltage, battery connection −0.5 5.5 V
VSSA Analog ground −0.5 V
VSS Digital Ground −0.5 V
VDDIO I/O pins SCL, SDA, CCIF −0.5 VDDIO+0.3 V
VBAT I/O pins SWIN, CP1A, CP1B, CP2A, CP2B −0.5 VBAT+0.3 V
VHA I/O pins VHA, SWOUT, DS_EN, EXT_CLK, CLKDIV[2:0],
AGZN_REG_EN, WARN
−0.5 2.0 (Note 1) V
I
REG
Max DVREG Load Current 20 mA
I
VDDP
Max VDDP Source Current 30 mA
Temp Storage temperature −50 85 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Max value should not exceed VBAT +0.3 V
Table 2. ELECTRICAL OVERSTRESS IMMUNITY
Test Reference Test Conditions
ELECTROSTATIC DISCHARGE ON COMPONENT LEVEL:
ESD – HBM JESD22 − A114 2 kV (Note 2)
ESD − MM JESD22 − A115 200 V
ESD − CDM ESD−STM 5−3−1−1999 500 V all pins
Latch−up JESD78 100 mA @ 25°C
2. All pins at room temperature
