I
DD
Specifications
Table 13: DDR4 I
DD
Specifications and Conditions – 16GB (Die Revision A)
Values are for the MT40A1GM8 DDR4 SDRAM only and are computed from values specified in the 8Gb (1 Gig x 8) compo-
nent data sheet
Parameter Symbol 2666 2400 2133 Units
One bank ACTIVATE-PRECHARGE current I
DD0
1
800 720 640 mA
One bank ACTIVATE-PRECHARGE, wordline boost, I
PP
current I
PP0
1
48 48 48 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
1
920 840 760 mA
Precharge standby current I
DD2N
2
880 800 720 mA
Precharge standby ODT current I
DD2NT
1
800 720 640 mA
Precharge power-down current I
DD2P
2
560 480 400 mA
Precharge quite standby current I
DD2Q
2
800 720 720 mA
Active standby current I
DD3N
2
960 880 880 mA
Active standby I
PP
current I
PP3N
2
48 48 48 mA
Active power-down current I
DD3P
2
640 640 560 mA
Burst read current I
DD4R
1
1680 1520 1400 mA
Burst write current I
DD4W
1
1680 1520 1400 mA
Burst refresh current (1x REF) I
DD5R
1
824 752 712 mA
Burst refresh I
PP
current (1x REF) I
PP5R
1
64 64 64 mA
Self refresh current: Normal temperature range (0–85°C) I
DD6N
2
480 480 480 mA
Self refresh current: Extended temperature range (0–95°C) I
DD6E
2
560 560 560 mA
Self refresh current: Reduced temperature range (0–45°C) I
DD6R
2
400 400 400 mA
Auto self refresh current (25°C) I
DD6A
2
320 320 320 mA
Auto self refresh current (45°C) I
DD6A
2
400 400 400 mA
Auto self refresh current (75°C) I
DD6A
2
560 560 560 mA
Auto self refresh I
PP
current I
PP6X
2
80 80 80 mA
Bank interleave read current I
DD7
1
2000 1880 1800 mA
Bank interleave read I
PP
current I
PP7
1
144 144 144 mA
Maximum power-down current I
DD8
2
320 320 320 mA
Notes:
1. One module rank in the active I
DD/PP
, the other rank in I
DD2P/PP3N
.
2. All ranks in this I
DD/PP
condition.
16GB (x64, DR) 288-Pin DDR4 UDIMM
I
DD
Specifications
PDF: CCMTD-1725822587-9883
atf16c2gx64az.pdf – Rev. E 5/17EN
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.