Table 15: DDR4 I
DD
Specifications and Conditions – 16GB (Die Revision H)
Values are for the MT40A1GM8 DDR4 SDRAM only and are computed from values specified in the 8Gb (1 Gig x 8) compo-
nent data sheet
Parameter Symbol 2666 2400 Units
One bank ACTIVATE-PRECHARGE current I
DD0
1
696 656 mA
One bank ACTIVATE-PRECHARGE, wordline boost, I
PP
current I
PP0
1
60 60 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
1
800 760 mA
Precharge standby current I
DD2N
2
672 624 mA
Precharge standby ODT current I
DD2NT
1
600 560 mA
Precharge power-down current I
DD2P
2
432 432 mA
Precharge quite standby current I
DD2Q
2
576 544 mA
Active standby current I
DD3N
2
768 752 mA
Active standby I
PP
current I
PP3N
2
72 72 mA
Active power-down current I
DD3P
2
624 576 mA
Burst read current I
DD4R
1
1608 1392 mA
Burst write current I
DD4W
1
1952 1664 mA
Burst refresh current (1x REF) I
DD5R
1
624 608 mA
Burst refresh I
PP
current (1x REF) I
PP5R
1
80 80 mA
Self refresh current: Normal temperature range (0–85°C) I
DD6N
2
576 576 mA
Self refresh current: Extended temperature range (0–95°C) I
DD6E
2
784 768 mA
Self refresh current: Reduced temperature range (0–45°C) I
DD6R
2
416 416 mA
Auto self refresh current (25°C) I
DD6A
2
240 240 mA
Auto self refresh current (45°C) I
DD6A
2
416 416 mA
Auto self refresh current (75°C) I
DD6A
2
576 576 mA
Auto self refresh I
PP
current I
PP6X
2
80 80 mA
Bank interleave read current I
DD7
1
2136 2040 mA
Bank interleave read I
PP
current I
PP7
1
164 164 mA
Maximum power-down current I
DD8
2
336 336 mA
Notes:
1. One module rank in the active I
DD/PP
, the other rank in I
DD2P/PP3N
.
2. All ranks in this I
DD/PP
condition.
16GB (x64, DR) 288-Pin DDR4 UDIMM
I
DD
Specifications
PDF: CCMTD-1725822587-9883
atf16c2gx64az.pdf – Rev. E 5/17EN
19
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 16: DDR4 I
DD
Specifications and Conditions – 16GB (Die Revision E)
Values are for the MT40A1GM8 DDR4 SDRAM only and are computed from values specified in the 8Gb (1 Gig x 8) compo-
nent data sheet
Parameter Symbol 3200 2666 2400 Units
One bank ACTIVATE-PRECHARGE current I
DD0
1
656 608 608 mA
One bank ACTIVATE-PRECHARGE, wordline boost, I
PP
current I
PP0
1
48 48 48 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
1
752 704 680 mA
Precharge standby current I
DD2N
2
592 560 544 mA
Precharge standby ODT current I
DD2NT
1
680 600 600 mA
Precharge power-down current I
DD2P
2
400 400 400 mA
Precharge quite standby current I
DD2Q
2
480 480 480 mA
Active standby current I
DD3N
2
896 816 768 mA
Active standby I
PP
current I
PP3N
2
48 48 48 mA
Active power-down current I
DD3P
2
688 624 592 mA
Burst read current I
DD4R
1
1544 1368 1280 mA
Burst write current I
DD4W
1
1440 1296 1224 mA
Burst refresh current (1x REF) I
DD5R
1
728 688 664 mA
Burst refresh I
PP
current (1x REF) I
PP5R
1
64 64 64 mA
Self refresh current: Normal temperature range (0–85°C) I
DD6N
2
496 496 496 mA
Self refresh current: Extended temperature range (0–95°C) I
DD6E
2
576 576 576 mA
Self refresh current: Reduced temperature range (0–45°C) I
DD6R
2
336 336 336 mA
Auto self refresh current (25°C) I
DD6A
2
137.6 137.6 137.6 mA
Auto self refresh current (45°C) I
DD6A
2
336 336 336 mA
Auto self refresh current (75°C) I
DD6A
2
496 496 496 mA
Auto self refresh I
PP
current I
PP6X
2
80 80 80 mA
Bank interleave read current I
DD7
1
1720 1640 1600 mA
Bank interleave read I
PP
current I
PP7
1
144 144 144 mA
Maximum power-down current I
DD8
2
400 400 400 mA
Notes:
1. One module rank in the active I
DD/PP
, the other rank in I
DD2P/PP3N
.
2. All ranks in this I
DD/PP
condition.
16GB (x64, DR) 288-Pin DDR4 UDIMM
I
DD
Specifications
PDF: CCMTD-1725822587-9883
atf16c2gx64az.pdf – Rev. E 5/17EN
20
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
SPD EEPROM Operating Conditions
For the latest SPD data, refer to Micron's SPD page: micron.com/spd.
Table 17: SPD EEPROM DC Operating Conditions
Parameter/Condition Symbol Min Nom Max Units
Supply voltage V
DDSPD
2.5 V
Input low voltage: logic 0; all inputs V
IL
–0.5 V
DDSPD
×
0.3
V
Input high voltage: logic 1; all inputs V
IH
V
DDSPD
×
0.7
V
DDSPD
+
0.5
V
Output low voltage: 3mA sink current V
DDSPD
> 2V V
OL
0.4 V
Input leakage current: (SCL, SDA) V
IN
= V
DDSPD
or V
SSSPD
I
LI
±5 µA
Output leakage current: V
OUT
= V
DDSPD
or V
SSSPD
, SDA in High-Z I
LO
±5 µA
Notes:
1. Table is provided as a general reference. Consult JEDEC JC-42.4 EE1004 and TSE2004 de-
vice specifications for complete details.
2. All voltages referenced to V
DDSPD
.
Table 18: SPD EEPROM AC Operating Conditions
Parameter/Condition Symbol Min Max Units
Clock frequency
t
SCL 10 1000 kHz
Clock pulse width HIGH time
t
HIGH 260 ns
Clock pulse width LOW time
t
LOW 500 ns
Detect clock LOW timeout
t
TIMEOUT 25 35 ms
SDA rise time
t
R 120 ns
SDA fall time
t
F 120 ns
Data-in setup time
t
SU:DAT 50 ns
Data-in hold time
t
HD:DI 0 ns
Data out hold time
t
HD:DAT 0 350 ns
Start condition setup time
t
SU:STA 260 ns
Start condition hold time
t
HD:STA 260 ns
Stop condition setup time
t
SU:STO 260 ns
Time the bus must be free before a new transi-
tion can start
t
BUF 500 ns
Write time
t
W 5 ms
Warm power cycle time off
t
POFF 1 ms
Time from power on to first command
t
INIT 10 ms
Note:
1. Table is provided as a general reference. Consult JEDEC JC-42.4 EE1004 and TSE2004 de-
vice specifications for complete details.
16GB (x64, DR) 288-Pin DDR4 UDIMM
SPD EEPROM Operating Conditions
PDF: CCMTD-1725822587-9883
atf16c2gx64az.pdf – Rev. E 5/17EN
21
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.

MTA16ATF2G64AZ-2G3A1

Mfr. #:
Manufacturer:
Micron
Description:
IC SDRAM DDR4 BGA
Lifecycle:
New from this manufacturer.
Delivery:
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