IPD30N10S3L34ATMA1

P1-P3 P4-P6 P7-P9

IPD30N10S3L-34

OptiMOS

®

-T Power-Transistor

Features

• N-channel - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

C

=25°C, V

GS

=10V

30 A

T

C

=100°C, V

GS

=10V

1)

20

Pulsed drain current

1)

I

D,pulse

T

C

=25°C

120

Avalanche energy, single pulse

1)

E

AS

I

D

=15A

138 mJ

Avalanche current, single pulse

I

AS

30 A

Gate source voltage

2)

V

GS

±20 V

Power dissipation

P

tot

T

C

=25°C

57 W

Operating and storage temperature

T

j

, T

stg

-55 ... +175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

Value

V

DS

100

V

R

DS(on),max

31

mW

I

D

30 A

Product Summary

Type Package Marking

IPD30N10S3L-34 PG-TO252-3-11 3N10L34

PG-TO252-3-11

Rev. 1.1 page 1 2011-10-06

IPD30N10S3L-34

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

1)

Thermal resistance, junction - case

R

thJC

- - 2.6 K/W

SMD version, device on PCB

R

thJA

minimal footprint - - 62

6 cm

2

cooling area

3)

- - 40

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0V, I

D

= 1mA

100 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=29µA

1.2 1.7 2.4

Zero gate voltage drain current

I

DSS

V

DS

=80V, V

GS

=0V,

T

j

=25°C

- 0.01 0.1 µA

V

DS

=80V, V

GS

=0V,

T

j

=125°C

1)

- 1 10

Gate-source leakage current

I

GSS

V

GS

=16V, V

DS

=0V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=4.5V, I

D

=30A

- 32.2 41.8

mW

V

GS

=10 V, I

D

=30 A

- 25.8 31.0

Values

Rev. 1.1 page 2 2011-10-06

IPD30N10S3L-34

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

1)

Input capacitance

C

iss

- 1520 1976 pF

Output capacitance

C

oss

- 380 494

Reverse transfer capacitance

C

rss

- 45 68

Turn-on delay time

t

d(on)

- 6 - ns

Rise time

t

r

- 4 -

Turn-off delay time

t

d(off)

- 18 -

Fall time

t

f

- 3 -

Gate Charge Characteristics

1)

Gate to source charge

Q

gs

- 5 7 nC

Gate to drain charge

Q

gd

- 4 6

Gate charge total

Q

g

- 24 31

Gate plateau voltage

V

plateau

- 3.7 - V

Reverse Diode

Diode continous forward current

1)

I

S

- - 30 A

Diode pulse current

1)

I

S,pulse

- - 120

Diode forward voltage

V

SD

V

GS

=0V, I

F

=30A,

T

j

=25°C

0.6 1 1.2 V

Reverse recovery time

1)

t

rr

V

R

=50V, I

F

=I

S

,

di

F

/dt=100A/µs

- 72 - ns

Reverse recovery charge

1)

Q

rr

- 150 - nC

1)

Defined by design. Not subject to production test.

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

2)

Qualified with V

GS

= +20/-5V.

T

C

=25°C

Values

V

GS

=0V, V

DS

=25V,

f=1MHz

V

DD

=20V, V

GS

=10V,

I

D

=30A, R

G

=3.5W

V

DD

=80V, I

D

=30A,

V

GS

=0 to 10V

Rev. 1.1 page 3 2011-10-06

P1-P3 P4-P6 P7-P9

IPD30N10S3L34ATMA1

Mfr. #:

Buy IPD30N10S3L34ATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet

IPD30N10S3L34ATMA1