IPD30N10S3L34ATMA1

IPD30N10S3L-34
13 Typical avalanche energy 14 Typ. drain-source breakdown voltage
E
AS
= f(T
j
) V
BR(DSS)
= f(T
j
); I
D
= 1 mA
parameter: I
D
15 Typ. gate charge 16 Gate charge waveforms
V
GS
= f(Q
gate
); I
D
= 30 A pulsed
parameter: V
DD
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
90
95
100
105
110
115
-55 -15 25 65 105 145
T
j
[°C]
V
BR(DSS)
[V]
20 V
80 V
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25
Q
gate
[nC]
V
GS
[V]
30 A
15 A
7.5 A
0
50
100
150
200
250
300
25 75 125 175
T
j
[°C]
E
AS
[mJ]
Rev. 1.1 page 7 2011-10-06
IPD30N10S3L-34
Published by
81726 Munich, Germany
©
Infineon Technologies AG 2008
All Rights Reserved.
Legal Disclaimer
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or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (
www.infineon.com
).
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Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
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express written approval of Infineon Technologies, if a failure of such components can reasonably
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If they fail, it is reasonable to assume that the health of the user or other persons may be
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Rev. 1.1 page 8 2011-10-06
IPD30N10S3L-34
Revision History
Version
1.1
1.1
Changes
Page 1: V
GS
changed from ±16V to
±20V
Page 3: Footnote 2) added
Date
08.04.2008
08.04.2008
Rev. 1.1 page 9 2011-10-06

IPD30N10S3L34ATMA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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