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PBSS5440D,115

P1-P3P4-P6P7-P9P10-P12P13-P14
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a
SOT457 (SC-74) SMD plastic package.
NPN complement: PBSS4440D.
1.2 Features
Ultra low collector-emitter saturation voltage V
CEsat
4 A continuous collector current capability I
C
(DC)
Up to 15 A peak current
Very low collector-emitter saturation resistance
High efficiency due to less heat generation
1.3 Applications
Power management functions
Charging circuits
DC-to-DC conversion
MOSFET gate driving
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), AL
2
O
3
, standard footprint.
[2] Pulse test: t
p
≤ 300 μs; δ≤0.02.
PBSS5440D
40 V PNP low V
CEsat
(BISS) transistor
Rev. 02 — 14 December 2009 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter voltage open base - - −40 V
I
C
collector current (DC)
[1]
--−4A
I
CM
peak collector current t = 1 ms or limited by
T
j(max)
--−15 A
R
CEsat
collector-emitter saturation
resistance
I
C
= −6A;
I
B
= −600 mA
[2]
- 5575mΩ
PBSS5440D_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 14 December 2009 2 of 13
NXP Semiconductors
PBSS5440D
40 V PNP low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Symbol
1 collector
2 collector
3base
4emitter
5 collector
6 collector
132
4
56
4
3
1, 2, 5, 6
sym030
Table 3. Ordering information
Type number Package
Name Description Version
PBSS5440D SC-74 plastic surface mounted package; 6 leads SOT457
Table 4. Marking codes
Type number Marking code
PBSS5440D 71
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −40 V
V
CEO
collector-emitter voltage open base - −40 V
V
EBO
emitter-base voltage open collector - −5V
I
C
collector current (DC)
[1]
- −4A
I
CM
peak collector current t = 1 ms or limited
by T
j(max)
- −15 A
I
B
base current (DC) - −0.8 A
I
BM
peak base current t
p
≤ 300 μs-−2A
P
tot
total power dissipation T
amb
≤ 25 °C
[2]
-360mW
[3]
-600mW
[4]
-750mW
[1]
-1.1W
[2][5]
-2.5W
P1-P3P4-P6P7-P9P10-P12P13-P14

PBSS5440D,115

Mfr. #:
Buy PBSS5440D,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS BISS TAPE-7
Lifecycle:
New from this manufacturer.
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