PBSS5440D_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 14 December 2009 11 of 13
NXP Semiconductors
PBSS5440D
40 V PNP low V
CEsat
(BISS) transistor
11. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PBSS5440D_2 20091214 Product data sheet - PBSS5440D_1
Modifications:
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
• Figure 2 “Transient thermal impedance from junction to ambient as a function of pulse time;
typical values”: updated
• Figure 3 “Transient thermal impedance from junction to ambient as a function of pulse time;
typical values”: updated
• Figure 4 “Transient thermal impedance from junction to ambient as a function of pulse time;
typical values”: updated
• Figure 6 “Base-emitter voltage as a function of collector current; typical values”: updated
• Figure 11 “Collector current as a function of collector-emitter voltage; typical values”:
updated
PBSS5440D_1 20050427 Product data sheet - -