PBSS5440D_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 14 December 2009 9 of 13
NXP Semiconductors
PBSS5440D
40 V PNP low V
CEsat
(BISS) transistor
8. Test information
Fig 13. BISS transistor switching time definition
(1) V
CC
= 10 V; I
C
= 2 A; I
Bon
= 0.1 A; I
Boff
=0.1A
Fig 14. Test circuit for switching times
006aaa266
I
Bon
(100 %)
I
B
input pulse
(idealized waveform)
I
Boff
90 %
10 %
I
C
(100 %)
I
C
t
d
t
on
90 %
10 %
t
r
output pulse
(idealized waveform)
t
f
t
t
s
t
off
R
C
R2
R1
DUT
mgd624
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC
PBSS5440D_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 14 December 2009 10 of 13
NXP Semiconductors
PBSS5440D
40 V PNP low V
CEsat
(BISS) transistor
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 13.
[2] T1: normal taping
[3] T2: reverse taping
Fig 15. Package outline SOT457 (SC-74)
04-11-08Dimensions in mm
3.0
2.5
1.7
1.3
3.1
2.7
pin 1 index
1.9
0.26
0.10
0.40
0.25
0.95
1.1
0.9
0.6
0.2
132
4
56
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 5000 10000
PBSS5440D SOT457 4 mm pitch, 8 mm tape and reel; T1
[2]
-115 - -135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125 - -165
PBSS5440D_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 14 December 2009 11 of 13
NXP Semiconductors
PBSS5440D
40 V PNP low V
CEsat
(BISS) transistor
11. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PBSS5440D_2 20091214 Product data sheet - PBSS5440D_1
Modifications:
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 2 “Transient thermal impedance from junction to ambient as a function of pulse time;
typical values: updated
Figure 3 “Transient thermal impedance from junction to ambient as a function of pulse time;
typical values: updated
Figure 4 “Transient thermal impedance from junction to ambient as a function of pulse time;
typical values: updated
Figure 6 “Base-emitter voltage as a function of collector current; typical values: updated
Figure 11 “Collector current as a function of collector-emitter voltage; typical values:
updated
PBSS5440D_1 20050427 Product data sheet - -

PBSS5440D,115

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS BISS TAPE-7
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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