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VNN7NV04PTR-E

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P29
Protection features VNN7NV04P-E, VNS7NV04P-E
10/29 Doc ID 15632 Rev 4
Figure 4. Switching time test circuit for resistive load
Figure 5. Test circuit for diode recovery times
t
I
D
90%
10%
t
V
gen
t
d(on)
t
d(off)
t
f
t
r
L=100uH
A
B
8.5
Ω
V
DD
R
gen
FAST
DIODE
OMNIFET
A
D
I
S
150
Ω
B
OMNIFET
D
S
I
V
gen
VNN7NV04P-E, VNS7NV04P-E Protection features
Doc ID 15632 Rev 4 11/29
Figure 6. Unclamped inductive load test
circuits
Figure 7. Input charge test circuit
Figure 8. Unclamped inductive waveforms
R
GEN
P
W
V
IN
V
IN
Protection features VNN7NV04P-E, VNS7NV04P-E
12/29 Doc ID 15632 Rev 4
3.1 Electrical characteristics curves
Figure 9. Derating curve Figure 10. Transconductance
Figure 11. Static drain-source on resistance
vs input voltage (part 1/2)
Figure 12. Static drain-source on resistance
vs input voltage (part 2/2)
Figure 13. Source-drain diode forward
characteristics
Figure 14. Static drain source on resistance
012345678
Id(A)
0
2
4
6
8
10
12
14
16
18
20
Gfs (S)
Vds=13V
Tj=25ºC
Tj=150ºC
Tj=-40ºC
33.544.555.566.57
Vin(V)
0
10
20
30
40
50
60
70
80
90
100
110
120
Rds(on) (mOhm)
Id=3.5A
Tj=150ºC
Tj= - 40ºC
Tj=25ºC
3 3.5 4 4.5 5 5.5 6 6.5
Vin(V)
0
20
40
60
80
100
120
140
Rds(on) (mOhm)
Id=6A
Id=1A
Id=6A
Id=1A
Id=6A
Id=1A
Tj=25ºC
Tj=150ºC
Tj=-40ºC
0123456
Id(A)
0
25
50
75
100
125
150
Rds(on) (mohms)
Tj=25ºC
Tj=150ºC
Tj=-40ºC
Vin=5V
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P29

VNN7NV04PTR-E

Mfr. #:
Buy VNN7NV04PTR-E
Manufacturer:
STMicroelectronics
Description:
Gate Drivers 40V 6A OMNIFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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