NCP81253MNTBG

© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 0
1 Publication Order Number:
NCP81253/D
NCP81253
5 V MOSFET Driver
Compatible with
Single-Phase IMVP8
Controllers
The NCP81253 is a high performance dual MOSFET gate driver in
a small 2 mm x 2 mm package, optimized to drive the gates of both
high−side and low−side power MOSFETs in a synchronous buck
converter. The driver outputs can be placed into a high−impedance
state via the tri−state PWM and EN inputs. The NCP81253 comes
packaged with an integrated boost diode to minimize external
components. A VCC UVLO function guarantees the outputs are low
when the supply voltage is low.
Features
Space−efficient 2 mm x 2 mm DFN8 Thermally−enhanced Package
VCC Range of 4.5 V to 5.5 V
Internal Bootstrap Diode
5 V 3−stage PWM Input
Diode Braking Capability via EN Mid−state
Adaptive Anti−cross Conduction Circuit Protects against
Cross−conduction during FET Turn−on and Turn−off
Output Disable Control Turns Off both MOSFETs via Enable Pin
VCC Undervoltage Lockout
These devices are Pb−free, Halogen−free/BFR−free and are RoHS
compliant
Typical Applications
Power Solutions for Notebook and Desktop Systems
Device Package Shipping
ORDERING INFORMATION
NCP81253MNTBG DFN8
(Pb−Free)
3000 / Tape &
Reel
DFN8
CASE 506AA
MARKING
DIAGRAM
www.onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
CG = Specific Device Code
M = Date Code
G = Pb−Free Package
1
2
3
4
5
6
7
8
BST
PWM
SW
VCC
EN
DRVH
DRVL
GND
PINOUT DIAGRAM
(Note: Microdot may be in either location)
FLAG
9
CGMG
G
1
1
(Top View)
NCP81253
www.onsemi.com
2
Figure 1. Block Diagram
PWM
Logic
Anti−Cross
Conduction
VCC
VCC
EN
UVLO
SW
GND
BST
DRVH
DRVL
VCC
Table 1. PIN FUNCTION DESCRIPTION
Pin No. Pin Name Description
1 BST Floating bootstrap supply pin for the high−side gate driver. Connect the external bootstrap
capacitor between this pin and SW.
2 PWM Control input:
PWM = High ³ DRVH is high, DRVL is low.
PWM = Mid ³ DRVH and DRVL are low.
PWM = Low ³ DRVH is low, DRVL is high.
3 EN 3−state input:
EN = High ³ Driver is enabled; normal PWM operation.
EN = Mid ³ Driver is enabled; DRVH and DRVL are low (body diode braking).
EN = Low ³ Driver is disabled.
4 VCC Power supply input. Connect a bypass capacitor from this pin to ground.
5 DRVL Low−side gate drive output. Connect to the gate of the low−side MOSFET.
6 GND Bias and reference ground. All signals are referenced to this node.
7 SW Switch node. Connect this pin to the source of the high−side MOSFET and drain of the
low−side MOSFET.
8 DRVH High−side gate drive output. Connect to the gate of the high−side MOSFET.
9 FLAG Thermal flag. There is no electrical connection to the IC. Connect to the ground plane.
NCP81253
www.onsemi.com
3
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating Symbol Min Max
Main Supply Voltage (Note 1) V
CC
−0.3 V 6.5 V
Bootstrap Supply Voltage BST −0.3 V wrt/SW 35 V wrt/GND
40 V (v 50 ns) wrt/GND
6.5 V wrt/SW
Switch Node Voltage SW −5 V
−10 V (v 200 ns)
35 V
40 V (v 50 ns)
High−Side Driver Output DRVH −0.3 V wrt/SW
−2 V (v 200 ns) wrt/SW
BST + 0.3 V wrt/SW
Low−Side Driver Output DRVL −0.3 V
−5 V (v 200 ns)
VCC + 0.3 V
DRVH/DRVL Control Input, Enable Pin PWM, EN −0.3 V 6.5 V
Ground GND 0 V 0 V
Storage Temperature Range TSTG −55°C 150°C
Operating Junction Temperature Range TJ −40°C 150°C
Moisture Sensitivity Level MSL 1
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area.
Table 3. THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Characteristics, DFN8, 2x2 mm (Note 2)
Thermal Resistance, Junction−to−Air
R
q
JA
119 °C/W
2. Values based on copper area of 645 mm
2
(or 1 in
2
) of 1 oz copper thickness and FR4 PCB substrate.
Table 4. OPERATING RANGES (Note 3)
Rating
Symbol Min Max Unit
Input Voltage VCC 4.5 5.5 V
Ambient Temperature T
A
−40 100 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
3. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area.
Table 5. ELECTRICAL CHARACTERISTICS VCC = 4.5 V to 5.5 V, VBST−SWN = 4.5 V to 5.5 V, BST = 4.5 V to 30 V, SW = 0 V to
21 V; for typical values T
A
= 25°C, for min/max values T
A
= −40°C to 100°C; unless otherwise noted. (Notes 4, 5)
Parameter
Test Conditions Symbol Min Typ Max Unit
SUPPLY VOLTAGE
VCC Operation Voltage
VCC 4.5 5.5 V
UNDERVOLTAGE LOCKOUT
VCC Start Threshold
VCC rising V
UVLO
3.8 4.35 4.5 V
VCC UVLO Hysteresis V
UVLO_HYS
150 200 250 mV
SUPPLY CURRENT
Shutdown Mode
ICC + IBST, EN = GND I
shutdown
1 20
mA
Normal Mode ICC + IBST, EN = 5 V, PWM = 400 kHz
No load on driver outputs.
I
normal
1.6 mA
Standby Current 1 ICC + IBST, EN = 5 V, PWM = 0 V I
standby
0.9 mA
4. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.
5. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at T
J
= T
A
= 25°C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

NCP81253MNTBG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Gate Drivers SYNCHRONOUS BUCK MOS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet