NCP81253
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4
Table 5. ELECTRICAL CHARACTERISTICS VCC = 4.5 V to 5.5 V, VBST−SWN = 4.5 V to 5.5 V, BST = 4.5 V to 30 V, SW = 0 V to
21 V; for typical values T
A
= 25°C, for min/max values T
A
= −40°C to 100°C; unless otherwise noted. (Notes 4, 5)
Parameter UnitMaxTypMinSymbolTest Conditions
BOOTSTRAP DIODE
Forward Voltage
VCC = 5 V, Forward bias current = 2 mA 0.1 0.4 0.6 V
PWM INPUT
PWM Input High
PWM
HI
3.4 V
PWM Mid−State PWM
MID
1.3 2.7 V
PWM Input Low PWM
LO
0.7 V
HIGH−SIDE DRIVER
Output Impedance, Sourcing Current
VBST – VSW = 5 V 0.9 1.7
W
Output Impedance, Sinking Current VBST – VSW = 5 V 0.7 1.7
W
DRVH Rise Time VCC = 5 V, C
load
= 3 nF, VBST−VSW = 5 V,
DRVH−SW = 90% to 10%
tr
DRVH
16 25 ns
DRVH Fall Time VCC = 5 V, C
load
= 3 nF , VBST−VSW = 5 V,
DRVH−SW = 90% to 10%
tf
DRVH
11 18 ns
DRVH Turn−Off Propagation Delay C
load
= 3 nF, PWM = PWM
LO
to DRVH = 90% tpdl
DRVH
10 18 30 ns
DRVH Turn−On Propagation Delay C
load
= 3 nF, DRVL = 1 V to DRVH−SW = 10% tpdh
DRVH
10 15 40 ns
SW Pull−down Resistance SW to GND 45
kW
DRVH Pull−down Resistance DRVH to SW 45
kW
LOW−SIDE DRIVER
Output Impedance, Sourcing Current
VCC = 5 V 0.9 1.7
W
Output Impedance, Sinking Current VCC = 5 V 0.4 0.8
W
DRVL Rise Time VCC = 5 V, C
load
= 3 nF, VBST−VSW = 5 V,
DRVL = 90% to 10%
tr
DRVL
11 25 ns
DRVL Fall Time VCC = 5 V, C
load
= 3 nF , VBST−VSW = 5 V,
DRVL = 90% to 10%
tf
DRVL
8 15 ns
DRVL Turn−Off Propagation Delay C
load
= 3 nF, PWM = PWM
HI
to DRVL = 90% tpdl
DRVL
10 15 30 ns
DRVL Turn−On Propagation Delay C
load
= 3 nF, DRVH−SW = 1 V to DRVL = 10% tpdh
DRVL
5 8 25 ns
DRVL Pull−down Resistance DRVL to GND, VCC = GND 45
kW
EN INPUT
Enable Voltage High
EN
HI
3.3 V
Enable Voltage Mid EN
MID
1.35 1.8 V
Enable Voltage Low EN
LO
0.6 V
Input Bias Current −1.0 1.0
mA
EN High Propagation Delay Time PWM = 0 V, EN going from 0 V to EN
HI
to DRVL
rising to 10%
tpd
EN_HI
20 40 ns
SWITCH NODE
SW Node Leakage Current
20
mA
4. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.
5. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at T
J
= T
A
= 25°C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
