TJA1080A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 6 — 28 November 2012 44 of 49
NXP Semiconductors
TJA1080A
FlexRay transceiver
14. Appendix
14.1 EPL 3.0.1 requirements implemented in the TJA1080A
Table 17. EPL 3.0.1 requirements implemented
EPL 3.0.1 parameter Description
- wake-up via dedicated data frames
R
DCLoad
transmitter output voltage defined for DC bus load of 40 to 55 /100 pF
dBDTx10, dBDTx01 transmitter delay: 75 ns
uData0_LP receiver thresholds for detecting DATA_0 in low-power modes: 400 mV (min) /
100 mV (max)
dBDRxai idle reaction time: 50 ns to 275 ns
dBDActivityDetection activity detection time 100 ns to 250 ns
dBDRxia activity reaction time: 100 ns to 325 ns
uData1 uData0 receiver threshold mismatch: 30 mV
dBDRx10, dBDRx01 receiver delay: 75 ns
dBusRx0BD, dBusRx1BD minimum bit time: 70 ns
C_StarTxD, C_BDTxD maximum input capacitance on pin TXD: 10 pF
- BD_Off mode defined
short-circuit currents:
iBP
BMShortMax
,iBM
BPShortMax
BP shorted to BM: < 60 mA; no time limit
iBP
GNDShortMax
,iBM
GNDShortMax
BP/BM shorted to ground: < 60 mA; no time limit
iBP
-5ShortMax
,iBM
-5ShortMax
BP/BM shorted to 5 V: < 60 mA; no time limit
iBP
BAT48ShortMax
,iBM
BAT27ShortMax
BP/BM shorted to 27 V: < 60 mA; no time limit
iBP
BAT48ShortMax
,iBM
BAT27ShortMax
BP/BM shorted to 48 V: < 72 mA; no time limit
iBP
BAT60ShortMax
,iBM
BAT60ShortMax
BP/BM shorted to 60 V: < 90 mA; for 400 ms (max)
dBDRV
CC
V
CC
undervoltage recovery time: 10 ms (max)
uINH1
Not_Sleep
voltage drop from V
BAT
to INH: 1 V @ 200 A and V
BAT
5.5 V
iINH1
Leak
leakage current, when INH is floating: A
- qualification according to AEC-Q100 temperature classes
uESD
Ext
6 kV ESD (min) on pins BP and BM according to HBM (100 pF/1500 )
uESD
Int
2 kV ESD (min) on all other pins according to HBM (100 pF/1500 )
