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BUK9Y14-40B,115

P1-P3P4-P6P7-P9P10-P12P13-P13
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
BUK9Y14-40B
N-channel TrenchMOS logic level FET
Rev. 03 — 2 June 2008 Product data sheet
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Air bag Automotive ABS systems
Automotive transmission control Diesel injection systems
Fuel pump and injection Motors, lamps and solenoids
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C --40V
I
D
drain current V
GS
=5V; T
mb
=25°C;
see Figure 4 and 1
--56A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 --85W
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=5V; I
D
=10A;
V
DS
= 32 V; see Figure 14
-9-nC
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=5V; I
D
=20A;
T
j
=25°C; see Figure 12 and
13
- 1214mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
=56A; V
sup
≤ 40 V;
R
GS
=50Ω; V
GS
=5V;
T
j(init)
=25°C; unclamped
--89mJ
BUK9Y14-40B_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 2 June 2008 2 of 12
NXP Semiconductors
BUK9Y14-40B
N-channel TrenchMOS logic level FET
2. Pinning information
3. Ordering information
4. Limiting values
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[2] Repetitive avalanche rating limited by average junction temperature of 170 °C.
[3] Refer to application note AN10273 for further information.
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1, 2, 3 S source
SOT669 (LFPAK)
4 G gate
mb D mounting base;
connected to drain
mb
1234
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
BUK9Y14-40B LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C-40V
V
GS
gate-source voltage 15 15 V
I
D
drain current T
mb
=25°C; V
GS
= 5 V; see Figure 4 and 1 -56A
T
mb
= 100 °C; V
GS
= 5 V; see Figure 1 -40A
I
DM
peak drain current T
mb
=25°C; t
p
≤ 10 μs; pulsed; see Figure 4 - 226 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 -85W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
I
D
=56A; V
sup
≤ 40 V; R
GS
=50Ω; V
GS
=5V;
T
j(init)
=25°C; unclamped
-89mJ
E
DS(AL)R
repetitive drain-source
avalanche energy
see Figure 3
[1][2]
[3]
--J
Source-drain diode
I
S
source current T
mb
=25°C-56A
I
SM
peak source current t
p
≤ 10 μs; pulsed; T
mb
=25°C - 226 A
P1-P3P4-P6P7-P9P10-P12P13-P13

BUK9Y14-40B,115

Mfr. #:
Buy BUK9Y14-40B,115
Manufacturer:
Nexperia
Description:
MOSFET Trans MOSFET N-CH 40V 56A 5-Pin(4+Tab)
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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