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BUK9Y14-40B,115
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
BUK9Y14-40B_3
© NXP B.V
. 2008. All
rights reserved.
Product data sheet
Rev
. 03 — 2 June 2008
6 of 12
NXP Semiconductors
BUK9Y14-40B
N-channel T
renchMOS logic level FET
Fig 6.
Outp
ut characteristics: drain current as a
function of drain-so
urce
voltage; typical values
Fig 7.
Drain-source
on-state resist
ance as a function
of gate-sour
ce voltag
e; typical values
Fig 8.
F
orward transcon
ductance as a function of
drain current;
typical value
s
Fig 9.
T
ransfer
characteristic
s: drain current
as a
function of gate-source voltage; typical values
V
DS
(V)
01
0
8
46
2
003aab413
80
40
120
160
I
D
(A)
0
V
GS
(V) = 2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
3.8
4
5
6
15
V
GS
(V)
31
5
11
7
003aab415
9
12
15
R
DSon
(m
Ω
)
6
T
j
=2
5
°C
T
j
=2
5
°C
;
I
D
=2
0
A
I
D
(A)
53
0
25
15
20
10
003aab417
40
35
45
50
g
fs
(S)
30
V
GS
(V)
04
3
12
003aab416
20
30
10
40
50
I
D
(A)
0
T
j
= 175
°
C
T
j
= 25
°
C
T
j
=2
5
°C
;
V
DS
=2
5
V
V
DS
=2
5
V
BUK9Y14-40B_3
© NXP B.V
. 2008. All
rights reserved.
Product data sheet
Rev
. 03 — 2 June 2008
7 of 12
NXP Semiconductors
BUK9Y14-40B
N-channel T
renchMOS logic level FET
Fig 10.
Sub-threshold drai
n current as a function of
gate-source volt
age
Fig 1
1.
Gate-sourc
e threshold volt
age as a f
unction of
junction temperature
Fig 12.
Normalized drain-
source on-state resistance
factor as a function of
junction temperatur
e
Fig 13.
Drain-source
on-state
r
esistance as a function
of drain current; typical values
03ng53
V
GS
(V)
03
2
1
10
−
4
10
−
5
10
−
2
10
−
3
10
−
1
I
D
(A)
10
−
6
min
typ
max
−
60
180
120
06
0
03ng52
1.0
1.5
0.5
2.0
2.5
V
GS(th)
(V)
0
T
j
(
°
C)
min
typ
max
T
j
=2
5
°C
;
V
DS
=
V
GS
I
D
=1
mA
;
V
DS
=
V
GS
T
j
(
°
C)
−
60
180
120
06
0
003aab851
1
0.5
1.5
2
a
0
I
D
(A)
0
150
120
60
90
30
003aab414
10
20
30
R
DSon
(m
Ω
)
0
V
GS
(V) = 3
3.4
3.8
4
5
10
15
a
=
R
DS
o
n
R
DS
o
n
(
25
°C
)
T
j
=2
5
°C
BUK9Y14-40B_3
© NXP B.V
. 2008. All
rights reserved.
Product data sheet
Rev
. 03 — 2 June 2008
8 of 12
NXP Semiconductors
BUK9Y14-40B
N-channel T
renchMOS logic level FET
Fig 14.
G
ate-source voltage as a function of
gate
charge; typica
l values
Fig
15.
Input,
output and re
verse transfer capacitances
as a function of drain-
source volt
age; typical
values
Fig 16.
Source cu
rrent as a function of source-drain voltage; typical values
Q
G
(nC)
02
5
20
10
15
5
003aab412
2
3
1
4
5
V
GS
(V)
0
V
DS
= 14
V
V
DS
= 32
V
V
DS
(V)
10
−
1
10
2
10
1
003aab410
1000
1500
500
2000
2500
C
(pF)
0
C
iss
C
oss
C
rss
T
j
=2
5
°C
;
I
D
=1
0
A
V
GS
=0
V
;
f
=1
MHz
V
SD
(V)
0.0
1.0
0.8
0.4
0.6
0.2
003aab411
20
30
10
40
50
I
S
(A)
0
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=0
V
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
BUK9Y14-40B,115
Mfr. #:
Buy BUK9Y14-40B,115
Manufacturer:
Nexperia
Description:
MOSFET Trans MOSFET N-CH 40V 56A 5-Pin(4+Tab)
Lifecycle:
New from this manufacturer.
Delivery:
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