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BUK9Y14-40B,115

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BUK9Y14-40B_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 2 June 2008 3 of 12
NXP Semiconductors
BUK9Y14-40B
N-channel TrenchMOS logic level FET
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period
003aab217
0
20
40
60
0 50 100 150 200
T
mb
(
°
C)
I
D
(A)
T
mb
(°C)
0 20015050 100
03na19
40
80
120
P
der
(%)
0
V
GS
5V
P
der
=
P
tot
P
tot
(
25°C
)
× 100 %
003aab220
10
-1
1
10
10
2
10
-3
10
-2
10
-1
1 10
t
AL
(ms)
I
AL
(A)
(1)
(2)
(3)
(1) Singleípulse;T
j
=25°C.
(2) Singleípulse;T
j
= 150°C.
(3) Repetitive.
BUK9Y14-40B_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 2 June 2008 4 of 12
NXP Semiconductors
BUK9Y14-40B
N-channel TrenchMOS logic level FET
5. Thermal characteristics
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
003aab218
10
1
10
2
10
3
I
D
(A)
10
−1
V
DS
(V)
1 10
2
10
Limit R
DSon
= V
DS
/ I
D
t
p
= 10 μs
100 μs
1 ms
10 ms
100 ms
DC
T
mb
=25°C; I
DM
is single pulse
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
see Figure 5 --1.8K/W
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
03nm01
10
-2
10
-1
1
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Z
th (j-mb)
(K/W)
δ = 0.5
0.2
0.1
0.05
single shot
0.02
t
p
T
P
t
t
p
T
δ =
BUK9Y14-40B_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 2 June 2008 5 of 12
NXP Semiconductors
BUK9Y14-40B
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=250μA; V
GS
=0V;
T
j
=25°C
40 - - V
I
D
=250μA; V
GS
=0V;
T
j
=-55°C
36 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
= V
GS
;
T
j
=-55°C; see Figure 10
--2.3V
I
D
=1mA; V
DS
= V
GS
; T
j
=25°C;
see Figure 11 and 10
1.1 1.5 2 V
I
D
=1mA; V
DS
= V
GS
;
T
j
= 175 °C; see Figure 10
0.5 - - V
I
DSS
drain leakage current V
DS
=40V; V
GS
=0V;
T
j
= 175 °C
--500μA
V
DS
=40V; V
GS
=0V; T
j
=25°C - 0.02 1 μA
I
GSS
gate leakage current V
DS
=0V; V
GS
=20V; T
j
=25°C - 2 100 nA
V
DS
=0V; V
GS
=-20V;
T
j
=25°C
-2100nA
R
DSon
drain-source on-state
resistance
V
GS
=5V; I
D
=20A; T
j
= 175 °C;
see Figure 12
--26mΩ
V
GS
=4.5V; I
D
=20A; T
j
=25°C- - 16 mΩ
V
GS
=10V; I
D
=20A; T
j
=25°C- 9 11 mΩ
V
GS
=5V; I
D
=20A; T
j
=25°C;
see Figure 12 and 13
-1214mΩ
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 16
-0.851.2V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/μs;
V
GS
=0V; V
DS
=30V
-50-ns
Q
r
recovered charge - 26 - nC
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=10A; V
DS
=32V; V
GS
=5V;
see Figure 14
-21-nC
Q
GS
gate-source charge - 3.7 - nC
Q
GD
gate-drain charge - 9 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V;
f=1MHz; T
j
=25°C;
see Figure 15
- 1360 1800 pF
C
oss
output capacitance - 274 330 pF
C
rss
reverse transfer
capacitance
- 147 200 pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
=2.5Ω;
V
GS
=5V; R
G(ext)
=10Ω
-15-ns
t
r
rise time - 34 - ns
t
d(off)
turn-off delay time - 68 - ns
t
f
fall time - 42 - ns
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BUK9Y14-40B,115

Mfr. #:
Buy BUK9Y14-40B,115
Manufacturer:
Nexperia
Description:
MOSFET Trans MOSFET N-CH 40V 56A 5-Pin(4+Tab)
Lifecycle:
New from this manufacturer.
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