MUBW35-12A8

© 2007 IXYS All rights reserved
1 - 8
20070912a
MUBW 35-12 A8
Converter - Brake - Inverter Module (CBI3)
Input Rectifier D11 - D16
Symbol Conditions Maximum Ratings
V
RRM
1600 V
I
FAV
T
C
= 80°C; sine 180° 30 A
I
DAVM
T
C
= 80°C; rectangular; d = 1/3; bridge 80 A
I
FSM
T
VJ
= 25°C; t = 10 ms; sine 50 Hz 300 A
P
tot
T
C
= 25°C 100 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
F
I
F
= 35 A; T
VJ
= 25°C 1.2 1.4 V
T
VJ
= 125°C 1.2 V
I
R
V
R
= V
RRM
;
T
VJ
= 25°C 0.02 mA
T
VJ
= 125°C 0.4 mA
R
thJC
(per diode) 1.3 K/W
Three Phase Brake Chopper Three Phase
Rectifier Inverter
V
RRM
= 1600 V V
CES
= 1200 V V
CES
= 1200 V
I
FAVM
= 42 A I
C25
= 35 A I
C25
= 50 A
I
FSM
= 300 A V
CE(sat)
= 2.3 V V
CE(sat)
= 2.5 V
IXYS reserves the right to change limits, test conditions and dimensions.
Application: AC motor drives with
Input from single or three phase grid
Three phase synchronous or
asynchronous motor
electric braking operation
Features
High level of integration - only one power
semiconductor module required for the
whole drive
NPT IGBT technology with low
saturation voltage, low switching
losses, high RBSOA and short circuit
ruggedness
Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
Industry standard package with insulated
copper base plate and soldering pins for
PCB mounting
Temperature sense included
NTC
D11 D13 D15
D12
D14
D16
1
23
D7
T7
T1
D1
T3
D3
T2
T4
T6
T5
D4
D2
D6
D5
21
22
7
6
4
5
16
15
18
17
20
19
11
10
23
24
14
8
9
12 13
See outline drawing for pin arrangement
E72873
© 2007 IXYS All rights reserved
2 - 8
20070912a
MUBW 35-12 A8
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 35 A
V
GE
=
±
15 V; R
G
= 47 Ω
Output Inverter D1 - D6
Symbol Conditions Maximum Ratings
I
F25
T
C
= 25°C 50 A
I
F80
T
C
= 80°C 35 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
F
= 35 A; V
GE
= 0 V; T
VJ
= 25°C 2.4 2.8 V
T
VJ
= 125°C 1.8 V
I
RM
I
F
= 30 A; di
F
/dt = -500 A/µs; T
VJ
= 125°C 27 A
t
rr
V
R
= 600 V; V
GE
= 0 V 150 ns
R
thJC
(per diode) 1.19 K/W
Output Inverter T1 - T6
Symbol Conditions Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C 1200 V
V
GES
Continuous
±
20 V
I
C25
T
C
= 25°C 50 A
I
C80
T
C
= 80°C 35 A
RBSOA V
GE
=
±
15 V; R
G
= 47 Ω; T
VJ
= 125°C I
CM
= 70 A
Clamped inductive load; L = 100 µH V
CEK
V
CES
t
SC
V
CE
= V
CES
; V
GE
=
±
15 V; R
G
= 47 Ω; T
VJ
= 125°C 10 µs
(SCSOA) non-repetitive
P
tot
T
C
= 25°C 225 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
I
C
= 35 A; V
GE
= 15 V; T
VJ
= 25°C 2.5 3.1 V
T
VJ
= 125°C 2.9 V
V
GE(th)
I
C
= 1 mA; V
GE
= V
CE
4.5 6.5 V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C 1.1 mA
T
VJ
= 125°C 1.0 mA
I
GES
V
CE
= 0 V; V
GE
=
±
20 V 200 nA
t
d(on)
100 ns
t
r
70 ns
t
d(off)
500 ns
t
f
70 ns
E
on
5.3 mJ
E
off
3.9 mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz 1.65 nF
Q
Gon
V
CE
= 600 V; V
GE
= 15 V; I
C
= 35 A 120 nC
R
thJC
(per IGBT) 0.55 K/W
© 2007 IXYS All rights reserved
3 - 8
20070912a
MUBW 35-12 A8
Brake Chopper T7
Symbol Conditions Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C 1200 V
V
GES
Continuous
±
20 V
I
C25
T
C
= 25°C 35 A
I
C80
T
C
= 80°C 25 A
RBSOA V
GE
=
±
15 V; R
G
= 82 Ω; T
VJ
= 125°C I
CM
= 35 A
Clamped inductive load; L = 100 µH V
CEK
V
CES
t
SC
V
CE
= V
CES
; V
GE
=
±
15 V; R
G
= 82 Ω; T
VJ
= 125°C 10 µs
(SCSOA) non-repetitive
P
tot
T
C
= 25°C 180 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
I
C
= 20 A; V
GE
= 15 V; T
VJ
= 25°C 2.3 3.0 V
T
VJ
= 125°C 2.6 V
V
GE(th)
I
C
= 0.6 mA; V
GE
= V
CE
4.5 6.5 V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C 0.8 mA
T
VJ
= 125°C 0.8 mA
I
GES
V
CE
= 0 V; V
GE
=
±
20 V 200 nA
t
d(on)
100 ns
t
r
75 ns
t
d(off)
500 ns
t
f
70 ns
E
on
3.1 mJ
E
off
2.4 mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MH z 1 nF
Q
Gon
V
CE
= 600 V; V
GE
= 15 V; I
C
= 20 A 70 nC
R
thJC
0.7 K/W
Brake Chopper D7
Symbol Conditions Maximum Ratings
V
RRM
T
VJ
= 25°C to 150°C 1200 V
I
F25
T
C
= 25°C 16 A
I
F80
T
C
= 80°C 11 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
F
= 20 A; T
VJ
= 25°C 3.2 3.6 V
T
VJ
= 125°C 2.5 V
I
R
V
R
= V
RRM
;
T
VJ
= 25°C 0.06 mA
T
VJ
= 125°C 0.07 mA
I
RM
I
F
= 10 A; di
F
/dt = -400 A/µs; T
VJ
= 125°C 13 A
t
rr
V
R
= 600 V 110 ns
R
thJC
3.2 K/W
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 20 A
V
GE
=
±
15 V; R
G
= 82 Ω

MUBW35-12A8

Mfr. #:
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 35 Amps 1200V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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