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MUBW35-12A8

P1-P3P4-P6P7-P8
© 2007 IXYS All rights reserved
4 - 8
20070912a
MUBW 35-12 A8
Dimensions in mm (1 mm = 0.0394")
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
R
25
T = 25°C 4.75 5.0 5.25 kΩ
B
25/50
3375 K
Module
Symbol Conditions Maximum Ratings
T
VJ
operating -40...+125 °C
T
JM
+150 °C
T
stg
-40...+125 °C
V
ISOL
I
ISOL
≤ 1 mA; 50/60 Hz 2500 V~
M
d
Mounting torque (M5) 3 - 6 Nm
Symbol Conditions Characteristic Values
min. typ. max.
R
pin-chip
5mΩ
d
S
Creepage distance on surface 6 mm
d
A
Strike distance in air 6 mm
R
thCH
with heatsink compound 0.01 K/W
Weight 300 g
© 2007 IXYS All rights reserved
5 - 8
20070912a
MUBW 35-12 A8
0.001 0.01 0.1 1
0
50
100
150
200
23456789110
10
2
10
3
0.0 0.6 1.2 1.8 2.4
0
20
40
60
80
100
120
0 40 80 120
0
50
100
150
200
250
300
350
0 20 40 60 80 100 120 140
0.001 0.01 0.1 1 10
0.0
0.4
0.8
1.2
I
2
t
I
FSM
I
F
A
V
F
t
s
t
ms
P
tot
W
I
d(AV)M
A
T
amb
t
s
K/W
A
2
s
0 20 40 60 80 100 120 140
0
10
20
30
40
50
60
70
80
I
d(AV)
T
C
A
V
A
CC
Z
thJC
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 45°C
T
VJ
= 150°C
50Hz, 80% V
RRM
T
VJ
= 45°C
T
VJ
= 150°C
R
thA
:
0.05 K/W
0.15 K/W
0.3 K/W
0.5 K/W
1 K/W
2 K/W
5 K/W
DWN 17
Fig. 4 Power dissipation versus direct output current and ambient temperature, sin 180°
Fig. 5 Max. forward current
versus case temperature
Fig. 6 Transient thermal impedance junction to case
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Input Rectifier Bridge D11 - D16
© 2007 IXYS All rights reserved
6 - 8
20070912a
MUBW 35-12 A8
0 200 400 600 800 1000
0
10
20
30
40
50
0
40
80
120
160
200
01234567
0
20
40
60
80
100
04080120160
0
5
10
15
20
01234567
0
20
40
60
80
100
V
CE
V
I
C
V
CE
A
I
C
V
nC
Q
G
-di/dt
V
V
GE
I
RM
t
rr
A/μs
MUBW35-12A8
I
RM
t
rr
A
9 V
11 V
4 6 8 10 12 14 16
0
20
40
60
80
100
V
V
GE
I
C
01234
0
20
40
60
80
100
V
V
F
I
F
ns
13 V
V
GE
= 17 V
15 V
T
VJ
= 25°C
9 V
11 V
13 V
V
GE
= 17 V
15 V
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
V
CE
= 20 V
T
VJ
= 125°C
T
VJ
= 25°C
V
CE
= 600 V
I
C
= 35 A
T
VJ
= 125°C
V
R
= 300 V
I
F
= 30 A
110
A
110
110
110
A
A
Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics
Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics
of free wheeling diode
Fig. 11 Typ. turn on gate charge Fig. 12 Typ. turn off characteristics
of free wheeling diode
Output Inverter T1 - T6 / D1 - D6
P1-P3P4-P6P7-P8

MUBW35-12A8

Mfr. #:
Buy MUBW35-12A8
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 35 Amps 1200V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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