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MUBW35-12A8
P1-P3
P4-P6
P7-P8
© 2007 IXYS All rights reserved
7 - 8
20070912a
MUBW 35-12 A8
Fig. 13
Typ. turn on energy and switching
Fig. 14
Typ. turn off energy and switching
times versus collector current
times versus collector current
Fig. 15
Typ. turn on energy and sw
itching
Fig.16
Typ.
turn off energy and switching
times versus gate resistor
times versus gate resistor
Fig. 17
Reverse
biased safe operating area
Fig. 18
Typ. transient thermal impedance
RBSOA
0
2
04
06
08
0
0
3
6
9
0
30
60
90
120
150
180
0
2
04
06
08
0
0
2
4
6
0
200
400
600
800
1000
1200
0.00
001
0.0001
0.001
0.01
0.1
1
10
0.0001
0.00
1
0.01
0.1
1
10
87
88
89
90
0
2
4
6
8
0
200
400
600
800
0
2
04
06
0
8
0
1
0
0
0
2
4
6
0
40
80
120
160
single pulse
0
200
400
600
800
1000
1200
1400
0
20
40
60
E
off
t
d(off)
t
f
E
off
t
d(o
ff)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
Ω
R
G
Ω
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
diod
e
V
A
mJ
ns
mJ
V
CE
= 600 V
V
GE
= ±15 V
I
C
=
35 A
T
VJ
= 125°C
ns
E
on
t
r
t
d(on)
E
on
t
r
t
d(on)
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 39
Ω
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
I
C
=
35 A
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 39
Ω
T
VJ
= 125°C
R
G
= 39
Ω
T
VJ
= 125°C
MUBW3512A8
Output Inverter T1 - T6 / D1 - D6
© 2007 IXYS All rights reserved
8 - 8
20070912a
MUBW 35-12 A8
012345
0
10
20
30
40
50
V
V
CE
A
I
C
012345
0
10
20
30
40
50
V
V
F
I
F
A
0
5
10
15
20
25
30
3
5
0
1
2
3
4
0
200
400
600
800
E
off
t
d(off)
t
f
I
C
A
E
off
t
mJ
ns
0
20
40
60
80
100
120
140
2.0
2.5
3.0
0
250
500
750
1000
E
off
t
d(off)
t
f
Ω
E
off
t
ns
mJ
0.001
0.01
0.1
1
10
0.0001
0.0
01
0.01
0.1
1
10
t
s
K/W
Z
thJC
0
2
5
50
75
100
125
150
100
1000
10000
T
C
Ω
R
R
G
V
GE
= 15 V
T
VJ
= 125°
C
T
VJ
= 25°C
V
CE
= 600 V
V
GE
= ±15 V
I
C
=
20 A
T
VJ
= 125°C
IGBT
diode
single
pulse
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 82
Ω
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
Fig. 19
Typ. output characteristics
Fig. 20
Typ. forward characteristics
of free wheeling diode
Fig. 21
Typ. turn off energy and switching
Fig. 22
Typ. turn off energy and switching
times versus collector current
times versus gate resistor
Fig. 23
Typ. transient thermal impedance
Fig. 24
Typ. thermistorresistance
versus temperature
Temperature Sensor NTC
Brake Chopper T7 / D7
P1-P3
P4-P6
P7-P8
MUBW35-12A8
Mfr. #:
Buy MUBW35-12A8
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 35 Amps 1200V
Lifecycle:
New from this manufacturer.
Delivery:
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MUBW35-12A8