CY7C056V
CY7C057V
Document #: 38-06055 Rev. ** Page 5 of 23
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65
°C to +150°C
Ambient Temperature with
Power Applied.............................................–55
°C to +125°C
Supply Voltage to Ground Potential............... –0.5V to +4.6V
DC Voltage Applied to
Outputs in High Z State ...........................–0.5V to V
DD
+0.5V
DC Input Voltage...................................–0.5V to V
DD
+0.5V
[6]
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......................................... >2001V
Latch-Up Current.................................................... >200 mA
Shaded areas contain advance information.
Note:
6. Pulse width < 20 ns.
Selection Guide
CY7C056V
CY7C057V
-12
CY7C056V
CY7C057V
-15
CY7C056V
CY7C057V
-20
Maximum Access Time (ns) 12 15 20
Typical Operating Current (mA) 250 240 230
Typical Standby Current for I
SB1
(mA) (Both Ports TTL Level) 55 50 45
Typical Standby Current for I
SB3
(µA) (Both Ports CMOS
Level)
10 µA 10 µA 10 µA
Pin Definitions
Left Port Right Port Description
A
0L
–A
13/14L
A
0R
–A
13/14R
Address (A
0
–A
13
for 16K; A
0
–A
14
for 32K devices)
SEM
L
SEM
R
Semaphore Enable
CE
0L
, CE
1L
CE
0R
, CE
1R
Chip Enable (CE is LOW when CE
0
≤ V
IL
and CE
1
≥ V
IH
)
INT
L
INT
R
Interrupt Flag
BUSY
L
BUSY
R
Busy Flag
I/O
0L
–I/O
35L
I/O
0R
–I/O
35R
Data Bus Input/Output
OE
L
OE
R
Output Enable
R/W
L
R/W
R
Read/Write Enable
B
0
–B
3
Byte Select Inputs. Asserting these signals enables read and write oper-
ations to the corresponding bytes of the memory array.
BM, SIZE See Bus Matching for details.
WA, BA See Bus Matching for details.
M/S Master or Slave Select
V
SS
Ground
V
DD
Power
Operating Range
Range
Ambient
Temperature V
DD
Commercial 0°C to +70°C 3.3V ± 165 mV
Industrial –40°C to +85°C 3.3V ± 165 mV
