2 GHz to 28 GHz, GaAs
pHEMT MMIC Low Noise Amplifier
Data Sheet
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FEATURES
Output power for 1 dB compression (P1dB): 16 dBm typical
Saturated output power (P
SAT
): 19.5 dBm typical
Gain: 15 dB typical
Noise figure: 2.0 dB typical
Output third-order intercept (IP3): 26 dBm typical
Supply voltage: 5 V at 64 mA
50 Ω matched input/output
APPLICATIONS
Test instrumentation
Military and space
FUNCTIONAL BLOCK DIAGRAM
Figure 1.
GENERAL DESCRIPTION
The HMC7950 is a gallium arsenide (GaAs), pseudomorphic
high electron mobility transistor (pHEMT), monolithic microwave
integrated circuit (MMIC). The HMC7950 is a wideband low
noise amplifier that operates between 2 GHz and 28 GHz. The
amplifier typically provides 15 dB of gain, 2.0 dB of noise figure,
26 dBm of output IP3, and 16 dBm of output power for 1 dB gain
compression, requiring 64 mA from a 5 V supply. The HMC7950
is self biased with only a single positive supply needed to
achieve a drain current, I
DD
, of 64 mA. The HMC7950 also has a
gain control option, V
GG
2. The HMC7950 amplifier input/outputs
are internally matched to 50 Ω and dc blocked. It comes in a
6 mm × 6 mm, 16-terminal LCC SMT ceramic package that is
easy to handle and assemble.
PACKAGE
BASE
GND
V
DD
1
2
3
11
10
9
NICNIC
GND GND
RFIN
RFOUT
GND GND
16
12
13
14
15
4
8
7
6
5
V
GG
2
NIC
NIC
HMC7950
NIC
NIC NIC
NIC
15412-001
