Characteristics STPS30L45C
2/12 Doc ID 8002 Rev 4
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
ΔT
j
(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Table 2. Absolute Ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 45 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward
current
TO-220FPAB T
c
=110 °C, δ = 0.5
Per diode
Per device
15
30
A
TO-220AB, TO-247,
I
2
PAK, D
2
PA K
T
c
= 135 °C, δ = 0.5
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 220 A
I
RRM
Repetitive peak reverse current t
p
= 2 µs square F = 1 kHz 1 A
I
RSM
Non repetitive peak reverse current t
p
= 100 µs square 3 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25 °C 6000 W
T
stg
Storage temperature range -65 to + 150 °C
T
j
Maximum operating junction temperature
(1)
150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
1. condition to avoid thermal runaway for a diode on its own heatsink
Ptot
dTj
--------------
1
Rth j a–()
--------------------------
<
Table 3. Thermal resistances
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-220FPAB
Per diode
Tot al
4
3.2
°C/W
TO-220AB, TO-247, I
2
PAK, D
2
PAK
Per diode
Tot al
1.60
0.85
R
th(c)
Coupling
TO-220FPAB 2.5
°C/W
TO-220AB, TO-247, I
2
PAK, D
2
PAK 0. 10
