Characteristics STPS30L45C
4/12 Doc ID 8002 Rev 4
Figure 5. Non repetitive surge peak forward
current versus overload duration
Figure 6. Non repetitive surge peak forward
current versus overload duration
(TO-220FPAB only)
1E-3 1E-2 1E-1 1E+0
0
20
40
60
80
100
120
140
160
180
200
t(s)
I
M
(A)
Tc=25°C
Tc=125°C
Tc=75°C
I
M
t
δ
=0.5
maximum values, per diode
1E-3 1E-2 1E-1 1E+0
0
20
40
60
80
100
120
140
t(s)
I
M
(A)
Tc=25°C
Tc=125°C
Tc=75°C
I
M
t
δ
=0.5
maximum values, per diode
Figure 7. Relative variation of thermal
impedance junction to case versus
pulse duration
Figure 8. Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
1E-4 1E-3 1E-2 1E-1 1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
T
δ
=tp/T
tp
1E-3 1E-2 1E-1 1E+0 1E+
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
δ
=tp/T
tp
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Figure 9. Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
Figure 10. Junction capacitance versus
reverse voltage applied (typical
values, per diode)
0 5 10 15 20 25 30 35 40 45
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
VR(V)
IR(mA)
Tj=100°C
Tj=75°C
Tj=25°C
Tj=150°C
Tj=125°C
12 51020 50
100
200
500
1000
2000
VR(V)
C(pF)
F=1MHz
Tj=25°C
