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BAP55LX,315

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
1. Product profile
1.1 General description
Planar PIN diode in a SOD882D leadless ultra small plastic SMD package.
1.2 Features and benefits
High speed switching for RF signals
Low diode capacitance
Low forward resistance
Very low series inductance
For applications up to 3 GHz
1.3 Applications
RF attenuators and switches
2. Pinning information
[1] The marking bar indicates the cathode.
3. Ordering information
BAP55LX
Silicon PIN diode
Rev. 4 — 6 August 2013 Product data sheet
DFN1006D-2
Table 1. Discrete pinning
Pin Description Simplified outline Symbol
1 cathode
[1]
2 anode
Transparent
top view
21
sym006
Table 2. Ordering information
Type number Package
Name Description Version
BAP55LX DFN1006D-2 leadless ultra small plastic package; 2 terminals;
body 1 0.6 0.4 mm
SOD882D
BAP55LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 6 August 2013 2 of 16
NXP Semiconductors
BAP55LX
Silicon PIN diode
4. Marking
[1] For SOD882D binary marking code description, see Figure 1.
4.1 Binary marking code description
5. Limiting values
6. Thermal characteristics
Table 3. Marking codes
Type number Marking code
[1]
BAP55LX 1111
1101
Fig 1. SOD882D binary marking code description example
VENDOR CODE
MARKING CODE
(EXAMPLE)
CATHODE BAR
READING DIRECTION
READING DIRECTION
READING EXAMPLE:
0111
1011
006aac477
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage - 50 V
I
F
forward current - 100 mA
P
tot
total power dissipation T
sp
= 90 C- 135mW
T
stg
storage temperature 65 +150 C
T
j
junction temperature 65 +150 C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction
to solder point
78 K/W
BAP55LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 6 August 2013 3 of 16
NXP Semiconductors
BAP55LX
Silicon PIN diode
7. Characteristics
Table 6. Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
= 50 mA - 0.95 1.1 V
I
R
reverse current V
R
= 20 V - - 10 nA
V
R
=50V - - 100 nA
C
d
diode capacitance see Figure 3; f = 1 MHz;
V
R
= 0 V - 0.28 - pF
V
R
= 1 V - 0.23 - pF
V
R
=20V - 0.18 0.28 pF
r
D
diode forward resistance see Figure 4; f = 100 MHz;
I
F
= 0.5 mA - 3.3 4.5
I
F
=1mA - 2.2 3.3
I
F
=10mA - 0.8 1.2
I
F
= 100 mA - 0.5 0.8
ISL isolation see Figure 5
;V
R
=0V;
f = 900 MHz - 19 - dB
f = 1800 MHz - 14 - dB
f = 2450 MHz - 12 - dB
L
ins
insertion loss see Figure 6;I
F
=0.5mA;
f = 900 MHz - 0.24 - dB
f = 1800 MHz - 0.25 - dB
f = 2450 MHz - 0.26 - dB
L
ins
insertion loss see Figure 6;I
F
=1mA;
f = 900 MHz - 0.17 - dB
f = 1800 MHz - 0.18 - dB
f = 2450 MHz - 0.19 - dB
L
ins
insertion loss see Figure 6;I
F
=10mA;
f = 900 MHz - 0.08 - dB
f = 1800 MHz - 0.09 - dB
f = 2450 MHz - 0.10 - dB
L
ins
insertion loss see Figure 6;I
F
= 100 mA;
f = 900 MHz - 0.05 - dB
f = 1800 MHz - 0.07 - dB
f = 2450 MHz - 0.08 - dB
L
charge carrier life time when switched from I
F
=10mA to
I
R
=6mA; R
L
= 100 ; measured at
I
R
=3mA
0.225 0.27 - s
L
S
series inductance I
F
= 100 mA; f = 100 MHz - 0.4 - nH
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BAP55LX,315

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Buy BAP55LX,315
Manufacturer:
NXP Semiconductors
Description:
PIN Diodes RF Pin Diode
Lifecycle:
New from this manufacturer.
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