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BAP55LX,315
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
BAP55LX
All informatio
n provided in thi
s document is
subject to le
gal disclaimers.
© NXP B.V
. 2013. All ri
ghts reserved.
Product data sheet
Rev
. 4 — 6 August 2013
7 of 16
NXP Semiconductors
BAP55LX
Silicon PIN diode
Z
0
= 50
; f = 100 MHz to 10 GHz.
(1)
I
F
= 0 mA
(2)
I
F
= 0.1 mA
(3)
I
F
= 0.5 mA
(4)
I
F
= 1 mA
(5)
I
F
= 5 mA
(6)
I
F
= 10 mA
(7)
I
F
= 100 mA
Fig 8.
O
utput reflec
tion coefficient (S
22
); typical values
001aan347
90
°
−
90
°
5
0.5
0.2
+
0.2
0
+
2
+
5
−
5
−
2
−
0.2
+
0.5
−
0.5
+
1
−
1
2
10
0
0.2
0.6
0.4
0.8
1.0
1.0
−
45
°
−
135
°
45
°
135
°
180
°
0
°
(1)
(2)
(3)
(4)
(5)
(6)
(7)
BAP55LX
All informatio
n provided in thi
s document is
subject to le
gal disclaimers.
© NXP B.V
. 2013. All ri
ghts reserved.
Product data sheet
Rev
. 4 — 6 August 2013
8 of 16
NXP Semiconductors
BAP55LX
Silicon PIN diode
Z
0
= 50
; f = 100 MHz to 10 GHz.
(1)
I
F
= 0 mA
(2)
I
F
= 0.1 mA
(3)
I
F
= 0.5 mA
(4)
I
F
= 1 mA
(5)
I
F
= 5 mA
(6)
I
F
= 10 mA
(7)
I
F
= 100 mA
Fig 9.
Forward transmi
ssion coefficient (S
21
); typical values
001aan346
90
°
−
90
°
−
45
°
−
135
°
45
°
135
°
0
°
0
180
°
−
1.0
−
0.8
−
0.6
−
0.4
−
0.2
(2)
(3)
(4)
(5)
(6)
(7)
(1)
BAP55LX
All informatio
n provided in thi
s document is
subject to le
gal disclaimers.
© NXP B.V
. 2013. All ri
ghts reserved.
Product data sheet
Rev
. 4 — 6 August 2013
9 of 16
NXP Semiconductors
BAP55LX
Silicon PIN diode
7.1.2
Diode in p
arallel configuration
Z
0
= 50
; f = 100 MHz to 10 GHz.
(1)
I
F
= 0.1 mA
(2)
I
F
= 0.5 mA
(3)
I
F
= 1 mA
(4)
I
F
= 5 mA
(5)
I
F
= 10 mA
(6)
I
F
= 100 mA
Fig 10.
Input reflection coefficient (S
11
); typical values
001aan342
90
°
−
90
°
5
0.5
0.2
0
+
2
+
5
−
5
−
2
−
0.2
+
0.5
−
0.5
+
1
−
1
2
1
10
0
0.2
0.6
0.4
0.8
1.0
1.0
−
45
°
−
135
°
45
°
135
°
180
°
0
°
(1)
(2)
(3)
(4)
(5)
(6)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
BAP55LX,315
Mfr. #:
Buy BAP55LX,315
Manufacturer:
NXP Semiconductors
Description:
PIN Diodes RF Pin Diode
Lifecycle:
New from this manufacturer.
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BAP55LX,315