Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
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Kind regards,
Team Nexperia
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm
2
.
[2] Pulse test: t
p
300 μs; δ≤0.01.
BSS138PW
60 V, 320 mA N-channel Trench MOSFET
Rev. 1 — 2 November 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
amb
=25°C--60V
V
GS
gate-source voltage T
amb
=25°C--±20 V
I
D
drain current T
amb
=25°C;
V
GS
=10V
[1]
--320mA
R
DSon
drain-source on-state
resistance
T
j
=25°C;
V
GS
=10V;
I
D
= 300 mA
[2]
-0.91.6Ω
BSS138PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 November 2010 2 of 16
NXP Semiconductors
BSS138PW
60 V, 320 mA N-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking
[1] * = placeholder for manufacturing site code
5. Limiting values
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2S source
3 D drain
12
3
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
BSS138PW SC-70 plastic surface-mounted package; 3 leads SOT323
Table 4. Marking codes
Type number Marking code
[1]
BSS138PW XJ*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
amb
=25°C-60V
V
GS
gate-source voltage T
amb
=25°C-±20 V
I
D
drain current V
GS
=10V
[1]
T
amb
=25°C-320mA
T
amb
=100°C-200mA
I
DM
peak drain current T
amb
=25°C;
single pulse; t
p
10 μs
-1.2A

BSS138PW,115

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET N-CH 60 V 320 mA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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