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BSS138PW,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
BSS138PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 November 2010 6 of 16
NXP Semiconductors
BSS138PW
60 V, 320 mA N-channel Trench MOSFET
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.01.
Table 7. Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
=10μA; V
GS
=0V 60--V
V
GS(th)
gate-source threshold
voltage
I
D
=250μA; V
DS
=V
GS
0.9 1.2 1.5 V
I
DSS
drain leakage current V
DS
=60V; V
GS
=0V
T
j
=25°C --1μA
T
j
= 150 °C --10μA
I
GSS
gate leakage current V
GS
= ±20 V; V
DS
= 0 V - - 100 nA
R
DSon
drain-source on-state
resistance
[1]
V
GS
=5V; I
D
=50mA - 1 2 Ω
V
GS
=10V; I
D
=300mA - 0.9 1.6 Ω
g
fs
forward
transconductance
V
DS
=10V; I
D
= 200 mA
[1]
- 700 - mS
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=300mA;
V
DS
=30V;
V
GS
=4.5V
- 0.72 0.8 nC
Q
GS
gate-source charge - 0.14 - nC
Q
GD
gate-drain charge - 0.24 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=10V;
f=1MHz
- 3850pF
C
oss
output capacitance - 7 - pF
C
rss
reverse transfer
capacitance
-4-pF
t
d(on)
turn-on delay time V
DS
=50V;
R
L
=250Ω;
V
GS
=10V;
R
G
=6Ω
- 26ns
t
r
rise time -3-ns
t
d(off)
turn-off delay time - 9 20 ns
t
f
fall time - 4 - ns
Source-drain diode
V
SD
source-drain voltage I
S
=115mA; V
GS
= 0 V 0.47 0.75 1.1 V
BSS138PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 November 2010 7 of 16
NXP Semiconductors
BSS138PW
60 V, 320 mA N-channel Trench MOSFET
T
amb
=25°CT
amb
=25°C; V
DS
=5V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical
values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
T
amb
=25°C
(1) V
GS
=2.0V
(2) V
GS
=2.5V
(3) V
GS
=3.0V
(4) V
GS
=3.5V
(5) V
GS
=10V
I
D
=300mA
(1) T
amb
= 150 °C
(2) T
amb
=25°C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
V
DS
(V)
0.0 4.03.01.0 2.0
017aaa112
0.4
0.6
0.2
0.8
1.0
I
D
(A)
0.0
3.0 V
2.25 V
2.0 V
2.5 V
2.75 V
V
GS
= 3.5 V
017aaa113
10
−4
10
−5
10
−3
I
D
(A)
10
−6
V
GS
(V)
0.0 2.01.50.5 1.0
(2)(1)
(3)
I
D
(A)
0.0 1.00.80.4 0.60.2
017aaa114
2.0
3.0
1.0
4.0
5.0
R
DSon
(Ω)
0.0
(2)(1)
(3)
(5)
(4)
V
GS
(V)
0.0 10.08.04.0 6.02.0
017aaa115
2.0
4.0
6.0
R
DSon
(Ω)
0.0
(1)
(2)
BSS138PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 November 2010 8 of 16
NXP Semiconductors
BSS138PW
60 V, 320 mA N-channel Trench MOSFET
V
DS
>I
D
× R
DSon
(1) T
amb
=25°C
(2) T
amb
= 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance
as a function of ambient temperature; typical
values
I
D
= 0.25 mA; V
DS
=V
GS
(1) maximum values
(2) typical values
(3) minimum values
f=1MHz; V
GS
=0V
(1) C
iss
(2) C
oss
(3) C
rss
Fig 12. Gate-source threshold voltage as a function of
ambient temperature
Fig 13. Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
017aaa116
V
GS
(V)
0.0 3.02.01.0
0.4
0.2
0.6
0.8
I
D
(A)
0.0
(1) (2)
(2) (1)
T
amb
(°C)
−60 180120060
017aaa022
1.2
0.6
1.8
2.4
a
0.0
a
R
DSon
R
DSon 25°C()
-----------------------------
=
T
amb
(°C)
−60 180120060
017aaa117
1.0
0.5
1.5
2.0
V
GS(th)
(V)
0.0
(2)
(1)
(3)
017aaa118
V
DS
(V)
10
−1
10
2
101
10
10
2
C
(pF)
1
(2)
(1)
(3)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

BSS138PW,115

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Buy BSS138PW,115
Manufacturer:
Nexperia
Description:
MOSFET N-CH 60 V 320 mA
Lifecycle:
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