BSS138PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 November 2010 3 of 16
NXP Semiconductors
BSS138PW
60 V, 320 mA N-channel Trench MOSFET
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
P
tot
total power dissipation T
amb
=25°C
[2]
-260mW
[1]
-310mW
T
sp
=25°C-830mW
T
j
junction temperature 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
Source-drain diode
I
S
source current T
amb
=25°C
[1]
-280mA
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Fig 1. Normalized total power dissipation as a
function of ambient temperature
Fig 2. Normalized continuous drain current as a
function of ambient temperature
T
amb
(°C)
−75 17512525 75−25
017aaa001
40
80
120
P
der
(%)
0
T
amb
(°C)
−75 17512525 75−25
017aaa002
40
80
120
I
der
(%)
0
P
der
P
tot
P
tot 25°C()
------------------------
100 %×= I
der
I
D
I
D25°C()
--------------------
100 %×=
