NP50P04KDG-E1-AY

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MOS FIELD EFFECT TRANSISTOR
NP50P04KDG
SWITCHING
P-CHANNEL POWER MOSFET
DATA SHEET
Document No. D18688EJ3V0DS00 (3rd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The NP50P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER LEAD PLATING PACKING PACKAGE
NP50P04KDG-E1-AY
Note
NP50P04KDG-E2-AY
Note
Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK)
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
Super low on-state resistance
R
DS(on)1 = 10 mΩ MAX. (VGS = 10 V, ID = 25 A)
R
DS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 25 A)
Low input capacitance
C
iss = 5100 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 40 V
Gate to Source Voltage (V
DS = 0 V) VGSS m20 V
Drain Current (DC) (T
C = 25°C) ID(DC) m50 A
Drain Current (pulse)
Note1
I
D(pulse) m150 A
Total Power Dissipation (T
C = 25°C) PT1 90 W
Total Power Dissipation (T
A = 25°C) PT2 1.8 W
Channel Temperature T
ch 175 °C
Storage Temperature T
stg 55 to +175 °C
Single Avalanche Current
Note2
I
AS 37 A
Single Avalanche Energy
Note2
E
AS 136 mJ
Notes 1. PW 10
μ
s, Duty Cycle 1%
2. Starting T
ch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance R
th(ch-C) 1.67 °C/W
Channel to Ambient Thermal Resistance R
th(ch-A) 83.3 °C/W
(TO-263)
<R>

NP50P04KDG-E1-AY

Mfr. #:
Manufacturer:
Description:
MOSFET P-CH 40V 50A TO-263
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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