NP50P04KDG-E1-AY

Data Sheet D18688EJ3V0DS
5
NP50P04KDG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
0
5
10
15
20
-75 -25 25 75 125 175 225
I
D
= 25 A
Pulsed
10 V
V
GS
=
4.5 V
T
ch - Channel Temperature - °C
Ciss, Coss, Crss - Capacitance - pF
10
100
1000
10000
-0.1 -1 -10 -100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
V
DS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
1
10
100
1000
-0.1 -1 -10 -100
t
t
d(on)
t
f
V
DD
=
20 V
V
GS
=
10 V
R
G
= 0
Ω
t
d(of f)
I
D - Drain Current - A
VDS - Drain to Source Voltage - V
0
-10
-20
-30
-40
0 20406080100120
0
-3
-6
-9
-12
V
DS
I
D
=
50 A
V
GS
V
DD
=
32 V
20 V
8 V
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
IF - Diode Forward Current - A
-0.01
-0.1
-1
-10
-100
-1000
00.511.5
V
GS
=
10 V
0 V
Pulsed
V
F(S-D) - Source to Drain Voltage - V
trr - Reverse Recovery Time - ns
1
10
100
1000
-0.1 -1 -10 -100
di/dt = 100 A/μs
V
GS
= 0 V
I
F - Diode Forward Current - A
Data Sheet D18688EJ3V0DS
6
NP50P04KDG
PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZK)
10.0±0.3
8.0 TYP.
2.54
0.75±0.2
9.15±0.3
2.54±0.25
15.25±0.5
1.35±0.3
123
4
2.5
4.45±0.2
1.3±0.2
0.5±0.2
0 to 8
o
1.Gate
2.Drain
3.Source
4.Fin (Drain)
No plating
7.88 MIN.
0.025 to
0.25
0.25
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
NP50P04KDG
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NP50P04KDG-E1-AY

Mfr. #:
Manufacturer:
Description:
MOSFET P-CH 40V 50A TO-263
Lifecycle:
New from this manufacturer.
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