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74ABT899
Absolute Maximum Ratings(Note 2)
Recommended Operating
Conditions
Note 2: Absolute maximum ratings are values beyond which the device
may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 3: Either voltage limit or current limit is sufficient to protect inputs.
DC Electrical Characteristics
Note 4: Guaranteed, but not tested.
Note 5: Add 3.75 mA for each ERR
LOW.
Storage Temperature −65°C to +150°C
Ambient Temperature under Bias −55°C to +125°C
Junction Temperature under Bias
Plastic −55°C to +150°C
V
CC
Pin Potential to
Ground Pin −0.5V to +7.0V
Input Voltage (Note 3) −0.5V to +7.0V
Input Current (Note 3) −30 mA to +5.0 mA
Voltage Applied to Any Output
in the Disable or Power-
Off State −0.5V to +5.5V
in the HIGH State −0.5V to V
CC
Current Applied to Output
in LOW State (Max)
twice the rated I
OL
(mA)
DC Latchup Source Current −500 mA
Over Voltage Latchup (I/O) 10V
Free Air Ambient Temperature −40°C to +85°C
Supply Voltage +4.5V to +5.5V
Minimum Input Edge Rate (∆V/∆t)
Data Input 50 mV/ns
Enable Input 20 mV/ns
Symbol Parameter Min Typ Max Units
V
CC
Conditions
V
IH
Input HIGH Voltage 2.0 V Recognized HIGH Signal
V
IL
Input LOW Voltage 0.8 V Recognized LOW Signal
V
CD
Input Clamp Diode Voltage −1.2 V Min I
IN
= −18 mA (Non I/O Pins)
V
OH
Output HIGH 2.5 V Min I
OH
= −3 mA, (A
n
, B
n
, APAR, BPAR)
Voltage 2.0 I
OH
= −32 mA, (A
n
, B
n
, APAR, BPAR)
V
OL
Output LOW Voltage 0.55 V Min I
OL
= 64 mA, (A
n
, B
n
, APAR, BPAR)
V
ID
Input Leakage Test 4.75 V 0.0 I
ID
= 1.9 µA, (Non-I/O Pins)
All Other Pins Grounded
I
IH
Input HIGH Current 5 µAMaxV
IN
= 2.7V (Non-I/O Pins) (Note 4)
V
IN
= V
CC
(Non-I/O Pins)
I
BVI
Input HIGH Current 7 µAMaxV
IN
= 7.0V (Non-I/O Pins)
Breakdown Test
I
BVIT
Input HIGH Current 100 µAMaxV
IN
= 5.5V (A
n
, B
n
, APAR, BPAR)
Breakdown Test (I/O)
I
IL
Input LOW Current −5 µAMaxV
IN
= 0.5V (Non-I/O Pins) (Note 4)
V
IN
= 0.0V (Non-I/O Pins)
I
IH
+ I
OZH
Output Leakage Current 50 µA 0V–5.5V V
OUT
= 2.7V (A
n
, B
n
);
GAB and GBA = 2.0V
I
IL
+ I
OZL
Output Leakage Current −50 µA 0V–5.5V V
OUT
= 0.5V (A
n
, B
n
);
GAB and GBA = 2.0V
I
OS
Output Short-Circuit Current −100 −275 mA Max V
OUT
= 0V (A
n
, B
n
, APAR, BPAR)
I
CEX
Output HIGH Leakage Current 50 µAMaxV
OUT
= V
CC
(A
n
, B
n
, APAR, BPAR)
I
ZZ
Bus Drainage Test 100 µA0.0VV
OUT
= 5.5V (A
n
, B
n
, APAR, BPAR);
All Others GND
I
CCH
Power Supply Current 250 µA Max All Outputs HIGH
I
CCL
Power Supply Current 34 mA Max All Outputs LOW, ERRA/B = HIGH (Note 5)
I
CCZ
Power Supply Current 250 µA Max Outputs 3-STATE All Others at V
CC
or GND
I
CCT
Additional I
CC
/Input 2.5 mA Max V
I
= V
CC
− 2.1V All Others at V
CC
or GND
I
CCD
Dynamic I
CC
: No Load 0.4 mA/MHz Max Outputs Open
(Note 4)
GAB or GBA = GND, LE = HIGH
Non-I/O = GND or V
CC
One bit toggling, 50% duty cycle
