NCP4330
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10
Figure 25. HighSide MOSFET Duty Cycle vs. I_ramp
Conditions: Switching Frequency: 400 kHz, Reset Pulse
Duration: 250 ns, Switching Delay (between LS and HS):
100 ns, Cramp = 100 pF.
0
25
50
75
100
0 0.5 1.0 1.5 2.0 2.5
I_ramp (mA)
D (%)
One can note that the duty cycle increases when the
I_ramp current increases. The duty cycle is zero if the
I_ramp current is below about 110 μA.
The duty cycle is limited to about 81% mainly by the reset
time and the 100 ns delay that all together represent 14% of
the period. In a 100 kHz application, the relative impact of
these times would be reduced and the maximum duty cycle
would be higher (in the range of 92%).
In fact, the highside ontimes are useful only during the
forward ontimes. Finally, if the duty cycle of the forward
converter is less than 80%, one can consider that the useful
post regulator duty cycle can vary between 0 and 100%.
It can also be noted that the HS MOSFET can be turned
on while the forward power switch is off, the forward
freewheeling MOSFET (Q2) is on and then no voltage is
applied to the postregulator. This is not an issue since the
MOSFETs Q2 and Q3 derive the L2 coil current so that the
free wheeling operation continues (refer to application
schematic).
However, such a situation should occur only during transient
phases. Should this state occur too frequently, an excessive
heating of the Q2 switch could be produced.
Figure 26. HS MOSFET Duty Cycle vs. I_ramp (zoom)
0
10
20
30
40
50
60
70
0 0.1 0.2 0.3 0.4 0.5 0.6
I_ramp (mA)
D (%)
RESET Block
The “reset” pin should receive the freewheeling drive
signal of the forward (refer to application schematic). When
this voltage exceeds the reset block threshold (2.55 V
typically), the C_ramp capacitor is grounded by an internal
switch for about 250 ns and the lowside MOSFET is turned
on. The circuit is then initialized for a new cycle.
The voltage that is applied to the “reset” pin, may be
negative during one part of the period. The NCP4330
incorporates a negative clamp system to avoid that too
negative voltages on the pin may cause carriers injection
within the die. The negative clamp acts to force a minimum
voltage of about –0.3 V in conjunction with the external
resistor R3. It features a current capability of about 2.0 mA.
Figure 27. Reset Block
Q?
NPN
Negative
Clamp
RST pin
C_ramp
C
R3
1
2
3
AND
250 ns
RESET Pin
Vdelay
Vdelay
Ctrl
Ctrl
GND
250 ns
Voltage
HYST COMP
+
-
Reset signal
2.55 V/
1.55 V
V
DD
V
DD
To HS and LS drivers
NCP4330
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11
LowSide Driver Stage
The timing diagram of page 2 portrays the sequencing
driven by the NCP4330.
The lowside drive is controlled by an internal
comparator that compares the C_ramp voltage to the internal
reference 2.5 V (1.0 V hysteresis). When the C_ramp
exceeds the 2.5 V reference, the comparator turns high
forcing the lowside MOSFET off. 100 ns later, the
highside MOSFET switches on.
When a reset signal is applied to the reset pin, the C_ramp
capacitor is grounded. As a consequence, the internal
comparator turns low and forces the lowside MOSFET on.
100 ns later, the highside MOSFET switches off.
The lowside drive is designed to drive on and off a 25 nC
gate charge power MOSFET, in 25 ns typical.
1. LowSide MOSFET Turn On:
In nominal operation, the body diode is already ON when
the lowside MOSFET turns on. The energy Qg to be
supplied is then approximately half the energy necessary if
the drain source voltage was high.
The necessary current capability is then:
I
ls * on
+
1
2
*
25 nC
25 ns
, that is 500 mA.
Figure 28. LowSide MOSFET Turn ON
4.5010 M 4.5015 M 4.5020 M 4.5025 M 4.5030 M
Time in Secs
40.0
20.0
0
20.0
40.0
ls_drv in volts
0
4.00
8.00
12.0
16.0
irl in amps
1.50
500 M
2.50
4.50
6.50
i(l1) in amps
320
240
160
80.0
0
vin1 in volts
0
20.0
40.0
60.0
80.0
v(vsn) in volts
vin1
i(l1)
v(vsn)
irl
ls_drv
Vin
lind
LS_DRV
I
Q
V
Q
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12
2. LowSide MOSFET Turn Off:
The highside MOSFET turns on about 100 ns after the
lowside one is switched off. During this time when both
switches are off, the body diode of the lowside MOSFET
derives the inductor current (in nominal load condition,
when the coil current is positive, i.e., it flows toward the
output). As a result, the LS MOSFET turns off while its
drainsource voltage keeps around zero due to its body
diode activation.
Again, the energy Qg to be supplied is then approximately
half its value if the drain source voltage was high.
The necessary current capability is then:
I
ls * off
+
1
2
*
25 nC
25 ns
, that is 500 mA.
High dV/dt occur in the application. When the highside
MOSFET turns on, the drainsource voltage of the lowside
MOSFET sharply increases, producing a huge current
through the Crss capacitor. This current may produce some
parasitic turn on of the LS MOSFET if the driver impedance
is not low enough to absorb this current without significant
increase of the driver voltage. The driver current capability
has then been increased to 750 mA so that it can effectively
face a 30 V variation in 10 ns with a MOSFET exhibiting a
250 pF Crss.
i(l1)
vin1
v(vsn)
irl
ls_drv
4.4990 M 4.4995 M 4.5000 M 4.5005 M 4.5010 M
Time in Secs
Vin
lind
I
Q
V
Q
LS_DRV
40.0
20.0
0
20.0
40.0
ls_drv in volts
0
4.00
8.00
12.0
16.0
irl in amps
1.50
500 M
2.50
4.50
6.50
i(l1) in amps
320
240
160
80.0
0
vin1 in volts
0
20.0
40.0
60.0
80.0
v(vsn) in volts
Figure 29. LowSide MOSFET Turn Off

NCP4330DR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Gate Drivers Secondary Side Synchronous
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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