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BSS126H6906XTSA1

P1-P3P4-P6P7-P9
BSS126
SIPMOS
®
Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with V
GS(th)
indicator on reel
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
V
DS
600 V
R
DS(on),max
700
Ω
I
DSS,min
0.007 A
Product Summary
PG-SOT-23
Type Package Pb-free Tape and Reel Information Marking
BSS126 PG-SOT-23 Yes H6327: 3000 pcs/reel SHs
BSS126 PG-SOT-23 Yes H6906: 3000 pcs/reel sorted in V
GS(th)
bands
1)
SHs
Rev. 2.1 page 1 2012-03-14
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
A
=25 °C
0.021 A
T
A
=70 °C
0.017
Pulsed drain current
I
D,pulse
T
A
=25 °C
0.085
Reverse diode dv/dt dv /dt
I
D
=0.016 A,
V
DS
=20 V,
di/dt=200 A/µs,
T
j,max
=150 °C
6 kV/µs
Gate source voltage
V
GS
±20 V
ESD sensitivity (HBM) as per
JESD22-A114
Class0 (0 >250 V)
Power dissipation
P
tot
T
A
=25 °C
0.50 W
Operating and storage temperature
T
j
, T
stg
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
1)
see table on next page and diagram 11
Value
BSS126 PG-SOT-23 Yes H6327: 3000 pcs/reel SHs
BSS126 PG-SOT-23 Yes H6906: 3000 pcs/reel sorted in V
GS(th)
bands
1)
SHs
Rev. 2.1 page 1 2012-03-14
BSS126
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - ambient
R
thJA
minimal footprint - - 250 K/W
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=-5 V, I
D
=250 µA
600 - - V
Gate threshold voltage
V
GS(th)
V
DS
=3 V, I
D
=8 µA
-2.7 -2.0 -1.6
Drain-source cutoff current
I
D(off)
V
DS
=600 V,
V
GS
=-5 V, T
j
=25 °C
- - 0.1 µA
V
DS
=600 V,
V
GS
=-5 V, T
j
=125 °C
--10
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- - 100 nA
Values
Rev. 2.1 page 2 2012-03-14
On-state drain current
I
DSS
V
GS
=0 V, V
DS
=25 V
7--mA
Drain-source on-state resistance
R
DS(on)
V
GS
=0 V, I
D
=3 mA
- 320 700
Ω
V
GS
=10 V, I
D
=16 mA
- 280 500
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=0.01 A
0.008 0.017 - S
Threshold voltage V
GS(th)
sorted in bands
2)
J
V
GS(th)
V
DS
=3 V, I
D
=8 µA
-1.8 - -1.6 V
K -1.95 - -1.75
L -2.1 - -1.9
M -2.25 - -2.05
N -2.4 - -2.2
2)
Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
Rev. 2.1 page 2 2012-03-14
BSS126
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
I
D
=f(V
GS
); V
DS
=3 V; T
j
=25 °C C
iss
-2128pF
Output capacitance
C
oss
- 2.4 3.2
Reverse transfer capacitance
C
rss
- 1.0 1.5
Turn-on delay time
t
d(on)
- 6.1 9.2 ns
Rise time
t
r
- 9.7 14.5
Turn-off delay time
t
d(off)
-1421
Fall time
t
f
- 115 170
Gate Charge Characteristics
Gate to source charge
Q
gs
- 0.05 0.08 nC
Gate to drain charge
Q
gd
- 1.2 1.8
Gate charge total
Q
g
- 1.4 2.1
Gate plateau voltage
V
plateau
- 0.10 - V
Values
V
GS
=-5 V, V
DS
=25 V,
f=1 MHz
V
DD
=300 V,
V
GS
=-3…7 V,
I
D
=0.01 A, R
G
=6 Ω
V
DD
=400 V,
I
D
=10 mA,
V
GS
=-3 to 5 V
Rev. 2.1 page 3 2012-03-14
Reverse Diode
Diode continous forward current
I
S
- - 0.016 A
Diode pulse current
I
S,pulse
- - 0.064
Diode forward voltage
V
SD
V
GS
=-5 V, I
F
=16 mA,
T
j
=25 °C
- 0.81 1.2 V
Reverse recovery time
t
rr
- 160 240 ns
Reverse recovery charge
Q
rr
- 13.2 19.8 nC
V
R
=300 V, I
F
=0.01 A,
di
F
/dt=100 A/µs
T
A
=25 °C
Rev. 2.1 page 3 2012-03-14
P1-P3P4-P6P7-P9

BSS126H6906XTSA1

Mfr. #:
Buy BSS126H6906XTSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 600V 21mA SOT-23-3
Lifecycle:
New from this manufacturer.
Delivery:
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