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BSS126H6906XTSA1

P1-P3P4-P6P7-P9
BSS126
1 Power dissipation 2 Drain current
P
tot
=f(T
A
) I
D
=f(T
A
); V
GS
≥10 V
0
0.1
0.2
0.3
0.4
0.5
0.6
0 40 80 120 160
P
tot
[W]
T
A
[°C]
0
0.005
0.01
0.015
0.02
0.025
0 40 80 120 160
I
D
[A]
T
A
[°C]
Rev. 2.1 page 4 2012-03-14
3 Safe operating area 4 Max. transient thermal impedance
I
D
=f(V
GS
); V
DS
=3 V; T
j
=25 °C Z
thJA
=f(t
p
)
parameter: t
p
parameter: D =t
p
/T
10 µs
100 µs
1 ms
10 ms
DC
10
0
10
1
10
2
10
3
10
-4
10
-3
10
-2
10
-1
I
D
[A]
V
DS
[V]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
1
10
2
10
3
Z
thJA
[K/W]
t
p
[s]
0
0.1
0.2
0.3
0.4
0.5
0.6
0 40 80 120 160
P
tot
[W]
T
A
[°C]
0
0.005
0.01
0.015
0.02
0.025
0 40 80 120 160
I
D
[A]
T
A
[°C]
Rev. 2.1 page 4 2012-03-14
BSS126
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
D
=f(V
DS
); T
j
=25 °C R
DS(on)
=f(I
D
); T
j
=25 °C
parameter: V
GS
parameter: V
GS
-0.2 V
-0.1 V
0 V
0.1 V0.2 V
0.5 V
1 V
10 V
0
100
200
300
400
500
600
700
800
900
1000
0 0.01 0.02 0.03 0.04
R
DS(on)
[Ω]
I
D
[A]
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V
0.5 V
1 V
10 V
0
0.01
0.02
0.03
0.04
0481216
I
D
[A]
V
DS
[V]
Rev. 2.1 page 5 2012-03-14
7 Typ. transfer characteristics 8 Typ. forward transconductance
I
D
=f(V
GS
); V
DS
=3 V; T
j
=25 °C g
fs
=f(I
D
); T
j
=25 °C
-0.2 V
-0.1 V
0 V
0.1 V0.2 V
0.5 V
1 V
10 V
0
100
200
300
400
500
600
700
800
900
1000
0 0.01 0.02 0.03 0.04
R
DS(on)
[Ω]
I
D
[A]
0
0.005
0.01
0.015
0.02
0.025
-2 -1 0 1
I
D
[A]
V
GS
[V]
0
0.005
0.01
0.015
0.02
0.025
0.000 0.005 0.010 0.015 0.020
g
fs
[S]
I
D
[A]
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V
0.5 V
1 V
10 V
0
0.01
0.02
0.03
0.04
0481216
I
D
[A]
V
DS
[V]
Rev. 2.1 page 5 2012-03-14
BSS126
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
DS(on)
=f(T
j
); I
D
= 0.016mA; V
GS
=0 V V
GS(th)
=f(T
j
); V
DS
=3 V; I
D
= 8 µA
parameter: I
D
typ
98 %
0
200
400
600
800
1000
1200
1400
1600
-60 -20 20 60 100 140 180
R
DS(on)
[Ω]
T
j
[°C]
typ
98 %
2 %
-3.5
-3
-2.5
-2
-1.5
-1
-60 -20 20 60 100 140 180
V
GS(th)
[V]
T
j
[°C]
Rev. 2.1 page 6 2012-03-14
11 Threshold voltage bands 12 Typ. capacitances
I
D
=f(V
GS
); V
DS
=3 V; T
j
=25 °C C =f(V
DS
); V
GS
=-3 V; f=1 MHz
8 µA
JK
LMN
0.001
0.01
0.1
-2.5 -2 -1.5 -1
I
D
[mA]
V
GS
[V]
typ
98 %
0
200
400
600
800
1000
1200
1400
1600
-60 -20 20 60 100 140 180
R
DS(on)
[Ω]
T
j
[°C]
typ
98 %
2 %
-3.5
-3
-2.5
-2
-1.5
-1
-60 -20 20 60 100 140 180
V
GS(th)
[V]
T
j
[°C]
Ciss
Coss
Crss
0.1
1
10
100
0102030
C [pF]
V
DS
[V]
Rev. 2.1 page 6 2012-03-14
P1-P3P4-P6P7-P9

BSS126H6906XTSA1

Mfr. #:
Buy BSS126H6906XTSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 600V 21mA SOT-23-3
Lifecycle:
New from this manufacturer.
Delivery:
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