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BSS126H6906XTSA1

P1-P3P4-P6P7-P9
BSS126
13 Forward characteristics of reverse diode 15 Typ. gate charge
I
F
=f(V
SD
) V
GS
=f(Q
gate
); I
D
=0.1 A pulsed
parameter: T
j
parameter: V
DD
0.2 VDS(max) 0.5 VDS(max)
0.8 VDS(max)
-4
-3
-2
-1
0
1
2
3
4
5
6
0 0.4 0.8 1.2 1.6
V
GS
[V]
Q
gate
[nC]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
0.001
0.01
0.1
00.511.522.5
I
F
[A]
V
SD
[V]
Rev. 2.1 page 7 2012-03-14
16 Drain-source breakdown voltage
I
D
=f(V
GS
); V
DS
=3 V; T
j
=25 °C
500
540
580
620
660
700
-60 -20 20 60 100 140 180
V
BR(DSS)
[V]
T
j
[°C]
0.2 VDS(max) 0.5 VDS(max)
0.8 VDS(max)
-4
-3
-2
-1
0
1
2
3
4
5
6
0 0.4 0.8 1.2 1.6
V
GS
[V]
Q
gate
[nC]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
0.001
0.01
0.1
00.511.522.5
I
F
[A]
V
SD
[V]
Rev. 2.1 page 7 2012-03-14
BSS126
Packa
g
e Outline:
Footprint: Packaging:
Rev. 2.1 page 8 2012-03-14
Dimensions in mm
Rev. 2.1 page 8 2012-03-14
BSS126
Rev. 2.1 page 9 2012-03-14Rev. 2.1 page 9 2012-03-14
P1-P3P4-P6P7-P9

BSS126H6906XTSA1

Mfr. #:
Buy BSS126H6906XTSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 600V 21mA SOT-23-3
Lifecycle:
New from this manufacturer.
Delivery:
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