MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21267-P/AP
TRANSFER-MOLD TYPE
INSULATED TYPE
Oct. 2005
Drive circuit
Drive circuit
Protection circuit
W
V
U
B
C
V
NC
CIN
A
P
N1
N
C
R
Shunt Resistor
External protection circuit
DIP-IPM
L-side IGBT
S
H-side IGBT
S
SC Protection
Trip Level
I
C
(A)
t
w
(µs)
2
0
Short Circuit Protective Function (SC) :
SC protection is achieved by sensing the L-side DC-Bus current (through the external
shunt resistor) after allowing a suitable filtering time (defined by the RC circuit).
When the sensed shunt voltage exceeds the SC trip-level, all the L-side IGBTs are turned
OFF and a fault signal (Fo) is output. Since the SC fault may be repetitive, it is
recommended to stop the system when the Fo signal is received and check the fault.
Collector current
waveform
(Note 1)
(Note 2)
Note1: In the recommended external protection circuit, please select the RC
time constant in the range 1.5~2.0µs.
2: To prevent erroneous protection operation, the wiring of A, B, C should
be as short as possible.
CIN
AC line input
Drive circuit
CBU–
CBU+
CBV–
CBV+
CBW–
CBW+
(15V line)
(3, 5V line) (Note 1, 2)
V
D
V
NC
W
V
U
Input signal
conditioning
Level shifter
Drive circuit
Protection
circuit (UV)
Input signal
conditioning
Input signal
conditioning
Input signal conditioning
Fo logic
Protection
circuit
circuit (UV)
Protection
circuit (UV)
Control supply
Under-Voltage
protection
Drive circuit Drive circuit
F
O
CFO
P
N1
N
Fault output (5V line)
(Note 3, 5)
High-side input (PWM)
(3, 5V line) (Note 1, 2)
Low-side input (PWM)
(Note 6)
(Note 7)
(Note 7)
DIP-IPM
Z : ZNR (Surge absorber)
C : AC filter (Ceramic capacitor 2.2~6.5nF)
(Note : Additionally, an appropriate line-to line
surge absorber circuit may become necessary
depending on the application environment.)
C2
C1
C1 : Tight tolerance, temp-compensated electrolytic type
C2 : 0.22~2µF R-category ceramic capacitor for noise filtering
(Note : The capacitance value depends on the PWM control
scheme used in the applied system.)
Note1: The logic of input signal is high-active. The DIP-IPM input signal section integrates a 2.5kΩ(min) pull-down resistor.
If using external RC filter, pay attention to satisfy the turn-on/off threshold voltage requirement.
2: By virtue of integrating an application specific type HVIC inside the module, direct coupling to MCU terminals without any opto-coupler or transformer
isolation is possible.
3: This output is open drain type. The signal line should be pulled up to the positive side of the 5V power supply with approximately 10kΩ resistor.
4: The wiring between the power DC link capacitor and the P, N1 terminals should be as short as possible to protect the DIP-IPM against catastrophic high
surge voltages. For extra precaution, a small film type snubber capacitor (0.1~0.22µF, high voltage type) is recommended to be mounted close to
these P & N1 DC power input pins.
5: Fo output pulse width should be decided by putting external capacitor between CFO and V
NC
terminals. (Example : C
FO
=22nF → t
FO
=1.8ms (Typ.))
6: High voltage (600V or more) and fast recovery type (less than 100ns) diodes should be used in the bootstrap circuit.
7: To prevent IC
S
from surge destruction, it is recommended to insert a Zener diode (24V, 1W) between each control supply terminals.
H-side IGBT
S
L-side IGBT
S
(Note 4)
Inrush current
limiter circuit
Level shifter Level shifter
Protection
AC line output
M
V
NC
Z
C
Fig. 2 INTERNAL FUNCTIONS BLOCK DIAGRAM (TYPICAL APPLICATION EXAMPLE)
Fig. 3 EXTERNAL PART OF THE DIP-IPM PROTECTION CIRCUIT