MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21267-P/AP
TRANSFER-MOLD TYPE
INSULATED TYPE
Oct. 2005
2.00
2.00
2.00
1.85
—
0.50
2.40
0.70
1
10
1.80
3.00
0.067
mA
V
T
j = 25°C
Tj = 125°C
I
C = 30A, Tj = 25°C
IC = 30A, Tj = 125°C
V
CE(sat)
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
ConditionSymbol
Parameter
Limits
Inverter IGBT part (per 1/6 module)
Inverter FWDi part (per 1/6 module)
Case to fin (per 1 module) thermal grease applied
Rth(j-c)Q
Rth(j-c)F
Rth(c-f)F
Min.
THERMAL RESISTANCE
Typ. Max.
—
—
—
—
—
—
Unit
T
j = 25°C, –IC = 30A, VIN = 0V
Condition
Symbol
Parameter
Limits
Min. Typ. Max.
—
—
—
0.65
—
—
—
—
—
—
Unit
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Collector-emitter saturation
voltage
FWDi forward voltage
Junction to case thermal
resistance (Note 3)
VD = VDB = 15V
VIN = 5V
Switching times
V
CC = 300V, VD = VDB = 15V
IC = 30A, Tj = 125°C, VIN = 0
↔
5V
Inductive load (upper-lower arm)
Collector-emitter cut-off
current
V
CE = VCES
1.50
1.50
1.50
1.25
0.30
0.30
1.70
0.40
—
—
V
µs
µs
µs
µs
µs
°C/W
°C/W
°C/W
CONTROL (PROTECTION) PART
Note 4 : Short circuit protection is functioning only at the low-arms. Please select the external shunt resistance such that the SC trip-level is
less than 2.0 times of the collector current rating.
5:Fault signal is output when the low-arms short circuit or control supply under-voltage protective functions operate. The fault output pulse-
width tFO depends on the capacitance value of CFO according to the following approximate equation : CFO = 12.2 ✕ 10
-6
✕ tFO [F].
Symbol
I
D
VFOH
VFOL
VSC(ref)
IIN
UVDBt
UVDBr
UVDt
UVDr
tFO
Vth(on)
Vth(off)
Parameter Condition
Limits
Unit
Circuit current
Fault output voltage
Short circuit trip level
Control supply under-voltage
protection
Fault output pulse width
ON threshold voltage
OFF threshold voltage
V
D = VDB = 15V
V
IN = 5V
Total of V
P1-VPC, VN1-VNC
VUFB-VUFS, VVFB-VVFS, VWFB-VWFS
VSC = 0V, FO circuit pull-up to 5V with 10kΩ
V
SC = 1V, IFO = 1mA
T
C = –20~100°C, VD = 15V (Note 4)
V
IN = 5V
Trip level
Reset level
Trip level
Reset level
C
FO = 22nF (Note 5)
Applied between U
P, VP, WP-VPC, UN, VN, WN-VNC
—
—
—
—
4.9
—
0.45
1.0
10.0
10.5
10.3
10.8
1.0
2.1
0.8
—
—
—
—
—
—
—
1.5
—
—
—
—
1.8
2.3
1.4
7.00
0.55
7.00
0.55
—
0.95
0.52
2.0
12.0
12.5
12.5
13.0
—
2.6
2.1
Min. Typ. Max.
mA
mA
mA
mA
V
V
V
mA
V
V
V
V
ms
V
V
V
D = VDB = 15V
V
IN = 0V
Total of V
P1-VPC, VN1-VNC
VUFB-VUFS, VVFB-VVFS, VWFB-VWFS
Tj ≤ 125°C
Note 3 : Grease with good thermal conductivity should be applied evenly with a thickness of about +100µm~+200µm on the contact surface
of DIP-IPM and heat-sink.
Input current
Contact thermal resistance
