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BTS410E2E3043NKSA1

P1-P3P4-P6P7-P9P10-P12P13-P15
PROFET
®
BTS410E2
Data Sheet 1 2013-10-15
Smart High-Side Power Switch
Features
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
1
)
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of V
bb
protection
Electrostatic discharge (ESD) protection
Green Product (RoHS compliant)
AEC Qualified
Application
C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
technology. Providing embedded protective functions.
1
)
With external current limit (e.g. resistor R
GND
=150 ) in GND connection, resistors in series with IN and ST
connections, reverse load current limited by connected load.
Product Summary
Overvoltage protection
V
bb(AZ)
65
V
Operating voltage
V
bb(on)
4.7 ... 42
V
On-state resistance
R
ON
220
m
Load current (ISO)
I
L(ISO)
1.8
A
Current limitation
I
L(SCr)
5
A
+ V
bb
IN
ST
Signal GND
ESD
PROFET
OUT
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection
Short circuit
detection
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
3
5
Load GND
Load
V
Logic
Overvoltage
protection
BTS410E2
Data Sheet 2 2013-10-15
Pin
Symbol
Function
1
GND
-
Logic ground
2
IN
I
Input, activates the power switch in case of logical high signal
3
V
bb
+
Positive power supply voltage,
the tab is shorted to this pin
4
ST
S
Diagnostic feedback, low on failure
5
OUT
(Load, L)
O
Output to the load
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 3)
V
bb
65
V
Load dump protection
2
)
V
LoadDump
= U
A
+ V
s
, U
A
= 13.5 V
R
I
3
)
= 2 , R
L
= 6.6 , t
d
= 400 ms, IN= low or high
V
Load dump
4
)
100
V
Load current (Short circuit current, see page 4)
I
L
self-limited
A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC), T
C
25 °C
P
tot
50
W
Inductive load switch-off energy dissipation, single pulse
V
bb
= 12V, T
j,start
= 150°C, T
C
= 150°C const.
I
L
= 1.8 A, Z
L
= 2.3 H, 0 :
E
AS
4.5
J
Electrostatic discharge capability (ESD) IN:
(Human Body Model) all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
V
ESD
1
2
kV
Input voltage (DC)
V
IN
-0.5 ... +6
V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
I
IN
I
ST
5.0
5.0
mA
Thermal Characteristics
Parameter and Conditions
Symbol
Values
Unit
min
typ
max
Thermal resistance chip - case:
junction - ambient (free air):
R
thJC
R
thJA
--
--
--
--
2.5
75
K/W
SMD version, device on PCB
5
)
:
--
35
--
2
)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins, e.g. with a
150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3
)
R
I
= internal resistance of the load dump test pulse generator
4
)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70m thick) copper area for V
bb
connection. PCB is vertical without blown air.
BTS410E2
Data Sheet 3 2013-10-15
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, V
bb
= 12 V unless otherwise specified
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
L
= 1.6 A T
j
=25 °C:
T
j
=150 °C:
R
ON
--
190
390
220
440
m
Nominal load current, ISO Norm (pin 3 to 5)
V
ON
= 0.5 V, T
C
= 85 °C
I
L(ISO)
1.6
1.8
--
A
Output current (pin 5) while GND disconnected or
GND pulled up, V
bb
=30 V, V
IN
= 0, see diagram
page 7, T
j
=-40...+150°C
I
L(GNDhigh)
--
--
1
mA
Turn-on time IN to 90% V
OUT
:
Turn-off time IN to 10% V
OUT
:
R
L
= 12 , T
j
=-40...+150°C
t
on
t
off
12
5
--
--
125
85
s
Slew rate on
10 to 30% V
OUT
, R
L
= 12 , T
j
=-40...+150°C
dV /dt
on
--
--
3
V/s
Slew rate off
70 to 40% V
OUT
, R
L
= 12 , T
j
=-40...+150°C
-dV/dt
off
--
--
6
V/s
Operating Parameters
Operating voltage
6
)
T
j
=-40...+150°C:
V
bb(on)
4.7
--
42
V
Undervoltage shutdown T
j
=25°C:
T
j
=-40...+150°C:
V
bb(under)
2.9
2.7
--
--
4.5
4.7
V
Undervoltage restart T
j
=-40...+150°C:
V
bb(u rst)
--
--
4.9
V
Undervoltage restart of charge pump
see diagram page 13
V
bb(ucp)
--
5.6
6.0
V
Undervoltage hysteresis
V
bb(under)
= V
bb(u rst)
- V
bb(under)
V
bb(under)
--
0.1
--
V
Overvoltage shutdown T
j
=-40...+150°C:
V
bb(over)
42
--
52
V
Overvoltage restart T
j
=-40...+150°C:
V
bb(o rst)
40
--
--
V
Overvoltage hysteresis T
j
=-40...+150°C:
V
bb(over)
--
0.1
--
V
Overvoltage protection
7
)
T
j
=-40...+150°C:
I
bb
=4 mA
V
bb(AZ)
65
70
--
V
Standby current (pin 3) T
j
=-40...+25°C:
V
IN
=0 T
j
= 150°C:
I
bb(off)
--
--
10
18
15
25
A
Leakage output current (included in I
bb(off)
)
VIN=0
I
L(off)
--
--
20
A
6
)
At supply voltage increase up to V
bb
= 5.6 V typ without charge pump, V
OUT
V
bb
- 2 V
7
)
Meassured without load. See also V
ON(CL)
in table of protection functions and circuit diagram page 7.
P1-P3P4-P6P7-P9P10-P12P13-P15

BTS410E2E3043NKSA1

Mfr. #:
Buy BTS410E2E3043NKSA1
Manufacturer:
Infineon Technologies
Description:
IC HIGH SIDE PWR SWITCH TO220-5
Lifecycle:
New from this manufacturer.
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