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BTS410E2E3043NKSA1

P1-P3P4-P6P7-P9P10-P12P13-P15
BTS410E2
Data Sheet 7 2013-10-15
Short circuit detection
Fault Condition: V
ON
> 8.5 V typ.; IN high
Short circuit
detection
Logic
unit
+ V
bb
OUT
V
ON
Inductive and overvoltage output clamp
+ V
bb
OUT
GND
PR OFET
V
Z
V
ON
V
ON
clamped to 68 V typ.
Overvolt. and reverse batt. protection
+ V
bb
IN
ST
ST
R
IN
R
GND
GND
R
Signal GND
Logic
PR OFET
V
Z2
V
Z1
V
Z1
= 6.2 V typ., V
Z2
= 70 V typ., R
GND
= 150 , R
IN
,
R
ST
= 15 k
Open-load detection
ON-state diagnostic condition: V
ON
< R
ON
* I
L(OL)
; IN
high
Open load
detection
Logic
unit
+ V
bb
OUT
ON
V
ON
GND disconnect
PROFET
V
IN
ST
OUT
GND
bb
V
bb
1
2
4
3
5
V
IN
V
ST
V
GND
Any kind of load. In case of Input=high is V
OUT
V
IN
- V
IN(T+)
.
Due to V
GND
>0, no V
ST
= low signal available.
GND disconnect with GND pull up
PROFET
V
IN
ST
OUT
GND
bb
V
bb
1
2
4
3
5
V
GND
V
IN
V
ST
Any kind of load. If V
GND
> V
IN
- V
IN(T+)
device stays off
Due to V
GND
>0, no V
ST
= low signal available.
BTS410E2
Data Sheet 8 2013-10-15
V
bb
disconnect with energized inductive
load
PROFET
V
IN
ST
OUT
GND
bb
V
bb
1
2
4
3
5
high
Normal load current can be handled by the PROFET
itself.
V
bb
disconnect with charged external
inductive load
PROFET
V
IN
ST
OUT
GND
bb
1
2
4
3
5
V
bb
high
S
D
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipation
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
E
E
AS
bb
L
R
E
Load
L
R
L
{Z
L
Energy stored in load inductance:
E
L
=
1
/
2
·L·I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
=
V
ON(CL)
·i
L
(t) dt,
with an approximate solution for R
L
0 :
E
AS
=
I
L
· L
2·R
L
·(V
bb
+ |V
OUT(CL)
|)· ln (1+
I
L
·R
L
|V
OUT(CL)
|
)
Maximum allowable load inductance for
a single switch off
L = f (I
L
); T
j,start
= 150°C,T
C
= 150°C const.,
V
bb
= 12 V, R
L
= 0
L [mH]
1
10
100
1000
10000
1 2 3 4 5 6
I
L
[A]
BTS410E2
Data Sheet 9 2013-10-15
Typ. transient thermal impedance chip case
Z
thJC
= f(t
p
, D), D=t
p
/T
Z
thJC
[K/W]
0.01
0.1
1
10
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1
0
0.01
0.02
0.05
0.1
0.2
0.5
D=
t
p
[s]
P1-P3P4-P6P7-P9P10-P12P13-P15

BTS410E2E3043NKSA1

Mfr. #:
Buy BTS410E2E3043NKSA1
Manufacturer:
Infineon Technologies
Description:
IC HIGH SIDE PWR SWITCH TO220-5
Lifecycle:
New from this manufacturer.
Delivery:
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