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BTS410E2E3043NKSA1

P1-P3P4-P6P7-P9P10-P12P13-P15
BTS410E2
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
min
typ
max
Data Sheet 4 2013-10-15
Operating current (Pin 1)
8
)
, V
IN
=5 V,
Tj
=-40...+150°C
I
GND
--
1
2.1
mA
Protection Functions
9
)
Initial peak short circuit current limit (pin 3 to 5)
10
)
,
( max 450 s if V
ON
> V
ON(SC)
)
I
L(SCp)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
9
--
4
--
12
--
23
--
15
A
Repetitive overload shutdown current limit
I
L(SCr)
V
ON
= 8 V, T
j
= T
jt
(see timing diagrams, page 11)
--
5
--
A
Short circuit shutdown delay after input pos. slope
V
ON
> V
ON(SC)
, T
j
=-40..+150°C:
min value valid only, if input "low" time exceeds 60 s
t
d(SC)
--
--
450
s
Output clamp (inductive load switch off)
at V
OUT
= V
bb
- V
ON(CL)
I
L
= 40 mA, T
j
=-40..+150°C:
V
ON(CL)
61
68
73
V
I
L
= 1 A, T
j
=-40..+150°C:
--
--
75
Short circuit shutdown detection voltage
(pin 3 to 5)
V
ON(SC)
--
8.5
--
V
Thermal overload trip temperature
T
jt
150
--
--
°C
Thermal hysteresis
T
jt
--
10
--
K
Reverse battery (pin 3 to 1)
11
)
-V
bb
--
--
32
V
Diagnostic Characteristics
Open load detection current
(on-condition) T
j
=-40 ..150°C:
I
L (OL)
2
--
150
mA
8
)
Add I
ST
, if I
ST
> 0, add I
IN
, if V
IN
>5.5 V
9
)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
10
)
Short circuit current limit for max. duration of t
d(SC) max
=450 s, prior to shutdown
11
)
Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
BTS410E2
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
min
typ
max
Data Sheet 5 2013-10-15
Input and Status Feedback
12
)
Input turn-on threshold voltage T
j
=-40..+150°C:
V
IN(T+)
1.5
--
2.4
V
Input turn-off threshold voltage T
j
=-40..+150°C:
V
IN(T-)
1.0
--
--
V
Input threshold hysteresis
V
IN(T)
--
0.5
--
V
Off state input current (pin 2), V
IN
= 0.4 V
I
IN(off)
1
--
30
A
On state input current (pin 2), V
IN
= 5 V
I
IN(on)
10
25
70
A
Status invalid after positive input slope
(short circuit) T
j
=-40 ... +150°C:
t
d(ST SC)
--
--
450
s
Status invalid after positive input slope
(open load) T
j
=-40 ... +150°C:
t
d(ST)
300
--
1400
s
Status output (open drain)
Zener limit voltage T
j
=-40...+150°C, I
ST
= +50 uA:
ST low voltage T
j
=-40...+150°C, I
ST
= +1.6 mA:
V
ST(high)
V
ST(low)
5.0
--
6
--
--
0.4
V
12
)
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
BTS410E2
Data Sheet 6 2013-10-15
Truth Table
Input-
Output
Status
level
level
412
B2
410
D2
410
E2/F2
410
G2
410
H2
Normal
operation
L
H
L
H
H
H
H
H
H
H
H
H
H
H
Open load
L
H
13
)
H
L
H
H
L
H
L
H
L
L
H
Short circuit
to GND
L
H
L
L
H
L
H
L
H
L
H
H
H
L
Short circuit
to V
bb
L
H
H
H
L
H
H
H (L
14
)
)
H
H (L
14)
)
H
H (L
14)
)
L
H
Overtem-
perature
L
H
L
L
L
L
L
L
L
L
L
L
L
L
Under-
voltage
L
H
L
L
L
15)
L
15)
L
15
)
L
15)
H
H
H
H
H
H
Overvoltage
L
H
L
L
L
L
L
L
H
H
H
H
H
H
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
13
)
Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
open load detection.
14
)
Low resistance short V
bb
to output may be detected in ON-state by the no-load-detection
15
)
No current sink capability during undervoltage shutdown
Terms
PROFET
V
IN
ST
OUT
GND
bb
V
ST
V
IN
I
ST
I
IN
V
bb
I
bb
I
L
V
OUT
I
GND
V
ON
1
2
4
3
5
R
GND
Input circuit (ESD protection)
IN
GND
I
R
ZD ZD
I
I
I1 I2
ESD-
ZD
I1
6 V typ., ESD zener diodes are not to be used as
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
Status output
ST
GND
ESD-
ZD
+5V
R
ST(ON)
ESD-Zener diode: 6 V typ., max 5 mA;
R
ST(ON)
< 250 at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
P1-P3P4-P6P7-P9P10-P12P13-P15

BTS410E2E3043NKSA1

Mfr. #:
Buy BTS410E2E3043NKSA1
Manufacturer:
Infineon Technologies
Description:
IC HIGH SIDE PWR SWITCH TO220-5
Lifecycle:
New from this manufacturer.
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