Electrode trace routing: Keep the electrode trace (and the electrode itself) away from other signal, power,
and ground traces including over or next to ground planes. Adjacent switching signals can induce noise
onto the sensing signal; any adjacent trace or ground plane next to, or under, the electrode trace will
cause an increase in Cx load and desensitize the device.
Note: For proper operation, a 100 nF (0.1 μF) ceramic bypass capacitor must be used directly between
Vdd and Vss to prevent latch-up if there are substantial Vdd transients; for example, during an ESD
event. The bypass capacitor should be placed very close to the Vss and Vdd pins.
4.5 Power On
On initial power up, the QT1010 requires approximately 100 ms to power on to allow power supplies to
stabilize. During this time the OUT pin state is not valid and should be ignored.
AT42QT1010
© 2017 Microchip Technology Inc.
Datasheet
DS40001946A-page 16
5. Specifications
5.1 Absolute Maximum Specifications
Operating temperature –40°C to +85°C
Storage temperature –55°C to +125°C
Vdd 0 to +6.5 V
Max continuous pin current, any control or drive pin ±20 mA
Short circuit duration to Vss, any pin Infinite
Short circuit duration to Vdd, any pin Infinite
Voltage forced onto any pin –0.6V to (Vdd + 0.6) V
CAUTION: Stresses beyond those listed under Absolute Maximum Specifications may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
other conditions beyond those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum specification conditions for extended periods may affect device
reliability.
5.2 Recommended Operating Conditions
Vdd +1.8 to 5.5 V
Short-term supply ripple + noise ±20 mV
Long-term supply stability ±100 mV
Cs value 2 to 50 nF
Cx value 5 to 50 pF
5.3 AC Specifications
Table 5-1. Vdd = 3.0 V, Cs = 4.7 nF, Cx = 5 pF, Ta = recommended range, unless otherwise noted
Parameter Description Min Typ Max Units Notes
Trc Recalibration time 200 ms Cs, Cx dependent
Tpc Charge duration 3.05 μs ±7.5% spread spectrum
variation
Tpt Transfer duration 9.0 μs ±7.5% spread spectrum
variation
Tg1 Time between end of burst and
start of the next (Fast mode)
1.2 ms
AT42QT1010
© 2017 Microchip Technology Inc.
Datasheet
DS40001946A-page 17
Parameter Description Min Typ Max Units Notes
Tg2 Time between end of burst and
start of the next (LP mode)
80 ms Increases with decreasing
Vdd
See Figure 5-1
Tbl Burst length 2.45 ms Vdd, Cs and Cx dependent.
See Section 4.2 for capacitor
selection.
Tr Response time 100 ms
Thb HeartBeat pulse width 15 μs
Figure 5-1. Tg2 Time Between Bursts (LP Mode)
AT42QT1010
© 2017 Microchip Technology Inc.
Datasheet
DS40001946A-page 18

AT42QT1010-MAHR

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