SIA537EDJ-T1-GE3 Datasheet SIA537EDJ-T1-GE3 | P1-P3

SiA537EDJ

www.vishay.com

Vishay Siliconix

S13-2635-Rev. A, 30-Dec-13

1

Document Number: 62934

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET

Marking Code: EK

Ordering Information:

SiA537EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

FEATURES

• TrenchFET

®

Power MOSFETs

• Typical ESD protection: N-channel 2400 V

P-channel 2000 V

• 100 % R

g

tested

• Material categorization: For definitions of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Portable devices such as smart phones, tablet PCs and

mobile computing

- Load switches

- Power management

- DC/DC converters

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

() MAX. I

D

(A) Q

g

(TYP.)

N-Channel 12

0.028 at V

GS

= 4.5 V 4.5

a

6.2 nC0.033 at V

GS

= 2.5 V 4.5

a

0.042 at V

GS

= 1.8 V 4.5

a

P-Channel -20

0.054 at V

GS

= -4.5 V -4.5

a

9.5 nC

0.070 at V

GS

= -2.5 V -4.5

a

0.104 at V

GS

= -1.8 V -4.5

a

0.165 at V

GS

= -1.5 V -1.5

PowerPAK

®

SC-70-6L Dual

Top View

2.05 mm

1

205

2 05 mm

2.05 mm

1

Bottom View

3

D

2

G

1

S

1

D

1

D

2

S

2

4

G

2

5

D

1

6

P-Channel MOSFET

N-Channel MOSFET

D

2

S

2

G

2

S

1

D

1

G

1

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT

Drain-Source Voltage V

DS

12 -20

V

Gate-Source Voltage V

GS

± 8

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

4.5

a

-4.5

a

A

T

C

= 70 °C 4.5

a

-4.5

a

T

A

= 25 °C 4.5

a,b,c

-4.5

a,b,c

T

A

= 70 °C 4.5

a,b,c

-4.5

a,b,c

Pulsed Drain Current (t = 100 μs) I

DM

20 -15

Source Drain Current Diode Current

T

C

= 25 °C

I

S

4.5

a

-4.5

a

T

A

= 25 °C 1.6

b,c

-1.6

b,c

Maximum Power Dissipation

T

C

= 25 °C

P

D

7.8 7.8

W

T

C

= 70 °C 5 5

T

A

= 25 °C 1.9

b,c

1.9

b,c

T

A

= 70 °C 1.2

b,c

1.2

b,c

Operating Junction and Storage Temperature Range

T

J

, T

stg

-55 to 150

°C

Soldering Recommendations (Peak Temperature)

d,e

260

SiA537EDJ

www.vishay.com

Vishay Siliconix

S13-2635-Rev. A, 30-Dec-13

2

Document Number: 62934

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/ppg?73257

). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 110 °C/W.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL

N-CHANNEL P-CHANNEL

UNIT

TYP. MAX. TYP. MAX.

Maximum Junction-to-Ambient

b,f

t  5 s R

thJA

52 65 52 65

°C/W

Maximum Junction-to-Case (Drain) Steady State R

thJC

12.5 16 12.5 16

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 μA

N-Ch 12 - -

V

GS

= 0 V, I

D

= -250 μA

P-Ch -20 - -

V

DS

Temperature Coefficient V

DS

/T

J

I

D

= 250 μA

N-Ch - 8 -

mV/°C

I

D

= -250 μA

P-Ch - -15 -

V

GS(th)

Temperature Coefficient V

GS(th)

/T

J

I

D

= 250 μA

N-Ch - -2.5 -

I

D

= -250 μA

P-Ch - 2.5 -

Gate Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA

N-Ch 0.4 - 1

V

DS

= V

GS

, I

D

= -250 μA

P-Ch -0.4 - -1

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 4.5 V

N-Ch - - ± 0.5

μA

P-Ch - - ± 3

V

DS

= 0 V, V

GS

= ± 8 V

N-Ch - - ± 5

P-Ch - - ± 30

Zero Gate Voltage Drain Current I

DSS

V

DS

= 12 V, V

GS

= 0 V

N-Ch - - 1

V

DS

= -20 V, V

GS

= 0 V

P-Ch - - -1

V

DS

= 12 V, V

GS

= 0 V, T

J

= 55 °C

N-Ch - - 10

V

DS

= -20 V, V

GS

= 0 V, T

J

= 55 °C

P-Ch - - -10

On-State Drain Current

b

I

D(on)

V

DS

 5 V, V

GS

= 4.5 V

N-Ch 10 - -

A

V

DS

 -5 V, V

GS

= -4.5 V

P-Ch -10 - -

Drain-Source On-State Resistance

b

R

DS(on)

V

GS

= 4.5 V, I

D

= 5.2 A

N-Ch - 0.023 0.028



V

GS

= -4.5 V, I

D

= -3.8 A

P-Ch - 0.044 0.054

V

GS

= 2.5 V, I

D

= 4.8 A

N-Ch - 0.027 0.033

V

GS

= -2.5 V, I

D

= -3.3 A

P-Ch - 0.057 0.070

V

GS

= 1.8 V, I

D

= 2.5 A

N-Ch - 0.035 0.042

V

GS

= -1.8 V, I

D

= -1 A

P-Ch - 0.075 0.104

V

GS

= -1.5 V, I

D

= -0.5 A

P-Ch - 0.097 0.165

Forward Transconductance

b

g

fs

V

DS

= 6 V, I

D

= 5.2 A

N-Ch - 23 -

S

V

DS

= -6 V, I

D

= -3.6 A

P-Ch - 11 -

SiA537EDJ

www.vishay.com

Vishay Siliconix

S13-2635-Rev. A, 30-Dec-13

3

Document Number: 62934

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width  300 μs, duty cycle  2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Dynamic

a

Input Capacitance C

iss

N-Channel

V

DS

= 6 V, V

GS

= 0 V, f = 1 MHz

P-Channel

V

DS

= -10 V, V

GS

= 0 V, f = 1 MHz

N-Ch - 455 -

pF

P-Ch - 770 -

Output Capacitance C

oss

N-Ch - 190 -

P-Ch - 90 -

Reverse Transfer Capacitance C

rss

N-Ch - 150 -

P-Ch - 81 -

Total Gate Charge Q

g

V

DS

= 6 V, V

GS

= 8 V, I

D

= 6.8 A

N-Ch - 10.5 16

nC

V

DS

= -10 V, V

GS

= -8 V, I

D

= -4.9 A

P-Ch - 16.3 25

N-Channel

V

DS

= 6 V, V

GS

= 4.5 V, I

D

= 6.8 A

P-Channel

V

DS

= -10 V, V

GS

= -4.5 V, I

D

= -4.9 A

N-Ch - 6.2 9.5

P-Ch - 9.5 14.5

Gate-Source Charge Q

gs

N-Ch - 0.8 -

P-Ch - 1.4 -

Gate-Drain Charge Q

gd

N-Ch - 1.6 -

P-Ch - 2.3 -

Gate Resistance R

g

f = 1 MHz

N-Ch 0.8 4 8



P-Ch 1 5.1 10

Turn-On Delay Time t

d(on)

N-Channel

V

DD

= 6 V, R

L

= 1.1 

I

D

 5.4 A, V

GEN

= 4.5 V, R

g

= 1 

P-Channel

V

DD

= -10 V, R

L

= 2.6 

I

D

 -3.9 A, V

GEN

= -4.5 V, R

g

= 1 

N-Ch - 10 15

ns

P-Ch - 15 25

Rise Time t

r

N-Ch - 12 20

P-Ch - 15 25

Turn-Off Delay Time t

d(off)

N-Ch - 25 40

P-Ch - 30 45

Fall Time t

f

N-Ch - 12 20

P-Ch - 10 15

Turn-On Delay Time t

d(on)

N-Channel

V

DD

= 6 V, R

L

= 1.3 

I

D

 5.4 A, V

GEN

= 8 V, R

g

= 1 

P-Channel

V

DD

= -10 V, R

L

= 2.6 

I

D

 -3.9 A, V

GEN

= -8 V, R

g

= 1 

N-Ch - 5 10

P-Ch - 7 16

Rise Time t

r

N-Ch - 10 15

P-Ch - 12 20

Turn-Off Delay Time t

d(off)

N-Ch - 20 30

P-Ch - 25 40

Fall Time t

f

N-Ch - 10 15

P-Ch - 10 15

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

T

C

= 25 °C

N-Ch - - 4.5

A

P-Ch - - -4.5

Pulse Diode Forward Current

a

I

SM

N-Ch - - 20

P-Ch - - -15

Body Diode Voltage V

SD

I

S

= 4.8 A, V

GS

= 0 V

N-Ch - 0.8 1.2

V

I

S

= -3.9 A, V

GS

= 0 V

P-Ch - -0.9 -1.2

Body Diode Reverse Recovery Time t

rr

N-Channel

I

F

= 5.4 A, dI/dt = 100 A/μs, T

J

= 25 °C

P-Channel

I

F

= -3.9 A, dI/dt = -100 A/μs, T

J

= 25 °C

N-Ch - 25 50

ns

P-Ch - 13 25

Body Diode Reverse Recovery Charge Q

rr

N-Ch - 10 20

nC

P-Ch - 5.5 12

Reverse Recovery Fall Time t

a

N-Ch - 13 -

ns

P-Ch - 7.5 -

Reverse Recovery Rise Time t

b

N-Ch - 12 -

P-Ch - 5.5 -

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

SIA537EDJ-T1-GE3

SIA537EDJ-T1-GE3

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