SiA537EDJ
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Vishay Siliconix
S13-2635-Rev. A, 30-Dec-13
8
Document Number: 62934
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P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Current vs. Gate-to-Source Voltage
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Current vs. Gate-to-Source Voltage
Transfer Characteristics
Capacitance
V
GS
- Gate-to-Source Voltage (V)
I
G
- Gate Current (mA)
0
10
20
30
40
50
03691215
T
J
= 25 °C
0
3
6
9
12
15
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
= 5 V thru 2.5 V
V
GS
=2V
V
GS
=1.5V
V
GS
=1V
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
0
0.04
0.08
0.12
0.16
0.20
03691215
V
GS
=1.5V
V
GS
=2.5V
V
GS
=1.8V
V
GS
=4.5V
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
10
-9
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
03691215
V
GS
- Gate-to-Source Voltage (V)
I
G
- Gate Current (A)
T
J
= 150 °C
T
J
= 25 °C
0
1
2
3
4
5
0.0 0.3 0.6 0.9 1.2 1.5
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
C
rss
0
300
600
900
1200
1500
048121620
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
