SiA537EDJ
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Vishay Siliconix
S13-2635-Rev. A, 30-Dec-13
5
Document Number: 62934
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N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0
2
4
6
8
04812
V
DS
=9.6V
V
DS
=6V
I
D
=6.8A
V
DS
=3V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.2
0.3
0.4
0.5
0.6
0.7
0.8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 50 - 25 0 25 50 75 100 125 150
V
GS
=4.5V,2.5V;I
D
=5.5A
V
GS
=1.8V;I
D
=2.5A
T
J
- Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
0.00
0.02
0.04
0.06
0.08
012345
I
D
= 5.2 A; T
J
= 25 °C
I
D
=2.5A;
T
J
= 25 °C
I
D
= 5.2 A; T
J
= 125 °C
I
D
=2.5A;T
J
= 125 °C
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
1000
100
1
0.001 0.01 0.1 10
Power (W)
Pulse (s)
20
10
5
15
0
