AMMC-6650-W10

AMMC-6650
DC–40 GHz Variable Attenuator
Data Sheet
Description
The AMMC-6650 is a voltage controlled variable attenua-
tor designed to operate from DC-40 GHz. It is fabricated
using Avago Technologies enhancement mode pHEMT
MMIC process with backside ground vias, and gate lengths
of approximately 0.25um. The distributed topology of the
AMMC-6650 facilitates broadband operation by absorbing
parasitic e ects of its series and shunt FETs. An on-chip DC
reference circuit may be used to maintain optimum VSWR
for any attenuation setting or to provide more linear
attenuation versus voltage response.
Simpli ed Schematic
Features
Wide Frequency Range DC-40 GHz
Attenuation Range 20dB
Single Positive Bias Supply
Unconditionally Stable
Applications
Microwave Radio Systems
Satellite VSAT, DBS Up / Down Link
LMDS & Pt – Pt mmW Long Haul
Broadband Wireless Access (including 802.16 and
802.20 WiMax)
WLL and MMDS loops
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 80 V
ESD Human Body Model = 400 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Chip Size: 1530 μm x 660 µm (61.2 x 26.4 mils)
Chip Size Tolerance: ±10 µm (±0.4 mils)
Chip Thickness: 100 ± 10 µm (4 ±0.4 mils)
Pad Dimensions: 80 x 120 µm (3.2 x 4.8 mils)
DCin
DCout
V2
V1
RFoutRFin
variable
attenuator
DC
reference circuit
2
Table 1. Absolute Maximum Ratings
Symbol Parameters and Test Conditions Unit Minimum Maximum
V
1
Voltage to Control VSWR V 0 1.6
V
2
Voltage to Control Attenuation V 0 1.6
P
in
RF Input Power dBm - 17
T
ch
Operating Channel Temperature °C - +150
T
stg
Storage Temperature °C -65 +150
T
max
Maximum Assembly Temperature °C +300
for 60 seconds
Notes:
Operation in excess of any one of these conditions may result in permanent damage to this device.
The absolute maximum ratings for V
1
, V
2
and P
in
were determined at an ambient temperature of 25ºC unless noted otherwise.
Table 2. DC Speci cations
Symbol Parameters Test Conditions Unit Min Typical Max
Ic_V
1
_ref V
1
Control Current (Min Attenuation) V1=1.5 V, V2=0 V mA - 1.93 2.0
Ic_V
2
_ref V
2
Control Current (Min Attenuation) V1=1.5 V, V2=0 V uA - 0.8 2.5
Ic_V
1
_max V
1
Control Current (Max Attenuation) V1=0V, V2=1.25 V uA - 1.1 2.5
Ic_V
2
_max V2 Control Current (Max Attenuation) V1=0 V, V2=1.25 V mA - 1.41 1.5
Notes:
Ambient temperature T
A
= 25°C
Table 3. RF Speci cations (T
A
= 25°C, Z
0
= 50)
Symbol Parameters and Test Conditions Units Freq. [GHz] Minimum Typical Maximum
Minimum Attenuation
(Reference State)
|S
21
|
V1 = 1.5 V
V2 = 0.0 V
dB 2 1.1 2.0
20 1.7 2.5
33 2.6 4.0
40 3.1 5.0
Maximum Attenuation |S
21
|
V1 = 0.0 V
V2 = 1.25 V
dB 2 24.0 26.4
20 24.5 28.1
33 26.0 32.7
40 27.0 35.7
Return Loss (In/Out)
at Reference State
V1=1.5 V, V2=0.0 V dB <40 10
Return Loss (In/Out)
at Max. Attenuation
V1=0.0 V, V2=1.25 V dB <40 10
Notes:
Data obtained from on-wafer measurements
3
Typical Distribution Charts
Figure 3d. Min Attenuation @ 33GHz, Nominal=2.6, USL=4.0 Figure 4d. Min Attenuation @ 40GHz, Nominal=3.1, USL=5.0
Figure 5d. Max Attenuation @ 2GHz, LSL=24.0, Nominal=26.4 Figure 6d. Max Attenuation @ 20GHz, LSL=24.5, Nominal=24.5
Figure 1d. Min Attenuation @ 2GHz, Nominal=1.1, USL=2.0 Figure 2d. Min Attenuation @ 20GHz, Nominal=1.7, USL=2.5
Figure 7d. Max Attenuation @ 33GHz, LSL=26.0, Nominal=32.7 Figure 8d. Max Attenuation @ 40GHz, LSL=27.0, Nominal=35.7
Notes:
1. All data from on-wafer measurements
2. Distribution data based on 5000 part sample from two wafer lots tested during initial characterization. Future wafers may have nominal values
anywhere between upper and lower limit

AMMC-6650-W10

Mfr. #:
Manufacturer:
Broadcom / Avago
Description:
Attenuators Attenuator DC-45GHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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