BFU660F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 11 January 2011 2 of 12
NXP Semiconductors
BFU660F
NPN wideband silicon RF transistor
1.4 Quick reference data
[1] T
sp
is the temperature at the solder point of the emitter lead.
[2] G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
=MSG.
2. Pinning information
3. Ordering information
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CBO
collector-base voltage open emitter - - 16 V
V
CEO
collector-emitter voltage open base - - 5.5 V
V
EBO
emitter-base voltage open collector - - 2.5 V
I
C
collector current - 30 60 mA
P
tot
total power dissipation T
sp
≤ 90 °C
[1]
-- 225mW
h
FE
DC current gain I
C
=10mA; V
CE
=2V;
T
j
=25°C
90 135 180
C
CBS
collector-base capacitance V
CB
= 2 V; f = 1 MHz - 138 - fF
f
T
transition frequency I
C
=20mA; V
CE
=1V;
f=2GHz; T
amb
=25°C
-21- GHz
IP3
O
output third-order intercept
point
I
C
=40mA; V
CE
=4V;
f=5.8GHz; T
amb
=25°C
-28- dBm
G
p(max)
maximum power gain I
C
=30mA; V
CE
=1V;
f=1.8GHz; T
amb
=25°C
[2]
-24- dB
NF noise figure I
C
=6mA; V
CE
=2V;
f=1.8GHz; Γ
S
= Γ
opt
;
T
amb
=25°C
-0.65- dB
P
L(1dB)
output power at 1 dB gain
compression
I
C
=60mA; V
CE
=4V;
Z
S
=Z
L
=50Ω;
f=1.8GHz; T
amb
=25°C
-17- dBm
Table 2. Discrete pinning
Pin Description Simplified outline Graphic symbol
1emitter
2base
3emitter
4 collector
12
34
mbb15
4
1, 3
2
Table 3. Ordering information
Type number Package
Name Description Version
BFU660F - plastic surface-mounted flat pack package; reverse
pinning; 4 leads
SOT343F
