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BFU660F,115

P1-P3P4-P6P7-P9P10-P12
BFU660F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 11 January 2011 7 of 12
NXP Semiconductors
BFU660F
NPN wideband silicon RF transistor
V
CE
=1V; I
C
=5mA; T
amb
=25°C. V
CE
=1V; I
C
=30mA; T
amb
=25°C.
Fig 7. Gain as a function of frequency; typical values Fig 8. Gain as a function of frequency; typical values
V
CE
=2V; T
amb
=25°C.
(1) f = 5.8 GHz
(2) f = 2.4 GHz
(3) f = 1.8 GHz
(4) f = 1.5 GHz
V
CE
=2V; I
C
= 6 mA; T
amb
=25°C.
Fig 9. Minimum noise figure as a function of
collector current; typical values
Fig 10. Minimum noise figure as a function of
frequency; typical values
f (GHz)
0108462
001aam828
20
30
10
40
G
(dB)
0
MSG
|S21|
2
G
p(max)
f (GHz)
0108462
001aam829
20
30
10
40
G
(dB)
0
MSG
|S21|
2
G
p(max)
I
C
(mA)
0252010 155
001aam830
1
2
3
NF
min
(dB)
0
(1)
(2)
(3)
(4)
001aam831
f (GHz)
08642
1.0
0.5
1.5
2.0
NF
min
(dB)
0
BFU660F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 11 January 2011 8 of 12
NXP Semiconductors
BFU660F
NPN wideband silicon RF transistor
8. Package outline
Fig 11. Package outline SOT343F
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
SOT343F
SOT343
F
05-07-12
06-03-16
UNIT
A
max
mm
0.4
0.3
0.75
0.65
0.7
0.5
2.2
1.8
0.25
0.10
1.35
1.15
0.48
0.38
2.2
2.0
b
p
DIMENSIONS (mm are the original dimensions)
P
lastic surface-mounted flat pack package; reverse pinning; 4 leads
b
1
c D E e e
1
H
E
1.151.3
L
p
w y
0.10.2
0 1 2 mm
scale
detail X
L
p
c
A
E
X
H
E
D
A
y
b
p
b
1
e
1
e
wA
M
wA
M
12
34
BFU660F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 11 January 2011 9 of 12
NXP Semiconductors
BFU660F
NPN wideband silicon RF transistor
9. Abbreviations
10. Revision history
Table 8. Abbreviations
Acronym Description
DC Direct Current
LNA Low Noise Amplifier
LTE Long Term Evolution
NPN Negative-Positive-Negative
RF Radio Frequency
SDARS Satellite Digital Audio Radio Service
UMTS Universal Mobile Telecommunications System
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BFU660F v.1 20110111 Product data sheet - -
P1-P3P4-P6P7-P9P10-P12

BFU660F,115

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Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors Single NPN 21GHz
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New from this manufacturer.
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